Furuya K | Department Of Physical Electronics Tokyo Institute Of Technology
スポンサーリンク
概要
関連著者
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FURUYA Kazuhito
Department of Physical Electronics, Tokyo Institute of Technology
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Furuya K
Department Of Physical Electronics Tokyo Institute Of Technology
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MIYAMOTO Yasuyuki
Department of Physical Electronics, Tokyo Institute of Technology
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Miyamoto Y
Department Of Physical Electronics Tokyo Institute Of Technology
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Furuya Kazuhito
Department Of Electrical And Electronic Engineering
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
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Suhara M
Tokyo Metropolitan Univ. Tokyo Jpn
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SUHARA Michihiko
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Hongo Hiroo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Hongo H
Nec Corp. Ibaraki Jpn
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Takemura Riichiro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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TAKEMURA Riichiro
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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SUZUKI Jun
Department of Health Care Chemistry, College of Environmental Health, Azabu University
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Suzuki Jun
Department Of Cardiovascular Medicine Tohoku University Graduate School Of Medicine
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Suzuki J
Tokyo Inst. Technol. Tokyo Jpn
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Suzuki J
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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SUHARA Michihiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Arai T
Department Of Physical Electronics Tokyo Institute Of Technology
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Suhara Michihiko
Department Of Electrical And Electronic Engineering Graduate School Of Science And Engineering Tokyo
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Suzuki Jun
Department Of Cardiology Saiseikai Saijo Hospital
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Hattori Tetsuya
Depaetment Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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HATTORI Takeo
New Industry Creation Hatchery Center, Tohoku University
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Hattori Takashi
Central Research Laboratory Hitachi Ltd.
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Hattori T
New Industry Creation Hatchery Center Tohoku University
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OOBO Takashi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Oobo Takashi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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ARAI Toshiki
Department of Physical Electronics, Tokyo Institute of Technology
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YAMAGAMI Shigeharu
Silicon Systems Research Labs.
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Hattori Takeo
Faculty Of Engineering Musashi Institute Of Technology
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SATO Ken
Department of Dermatology, Iwate Medical University School of Medicine
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SATO Kuninori
National Institute for Fusion Science
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NAKAMURA Yuji
Graduate School of Energy Science, Kyoto University
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Asada Masahiro
Department of Neurosurgery, Chibune Hospital
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Sato K
Asahi Glass Co. Ltd. Yokohama Jpn
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Kang Y
Konkuk Univ. Seoul Kor
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Sato K
Depertment Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Kang Young
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Sato K
Faculty Of Applied Biological Science Hiroshima University
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Sato K
National Institute For Fusion Science
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Asada Masahiro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Hattori Tetsuya
Department Of Physics Gakushuin University
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Hattori Tetsuya
Department Of Mathematics Faculty Of Science Rikkyo University
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Sato Kuninori
Institute For Fusion Science
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Sato K
National Defense Acad. Yokosuka Jpn
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Sato K
Faculty Of Technology Tokyo Universily Of Agriculture And Technology
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Sasaki K
Nagoya Univ. Nagoya Jpn
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Sato K
Dept. Of Energy Engineering And Science Nagoya University
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Nakamura Y
Kyoto Univ. Uji Jpn
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YAMAGAMI Shigeharu
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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HONJI Hidetaka
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Honji Hidetaka
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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SATO Kazuo
Faculty of Education, Tokusima University
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HARADA Yoshimichi
the Department of Physical Electronics, Tokyo Institute of Technology
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MIYAMOTO Yasuyuki
the Department of Physical Electronics, Tokyo Institute of Technology
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FURUYA Kazuhito
the Department of Physical Electronics, Tokyo Institute of Technology
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Kokubo Atsushi
Depaetment Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Harada Y
Univ. Hyogo Himeji‐shi Jpn
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Kang Young
Department Of Chemistry Sogang University
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Kang Young
Department Of Chemistry Chungbuk National University
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Sato Ken
Department Of Applied Physics Tokyo University Of Agriculture And Technology
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Hattori Tetsuya
Department Of Mathematics Faculty Of Science Osaka University
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Ikeda Yoshihiro
Department of Cardiology, Himeji Cardiovascular Center
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SAKAI Norio
Department of Molecular and Pharmacological Neuroscience, Graduate School of Biomedical Sciences, Hi
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Sakai N
Yokohama National Univ. Yokohama Jpn
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Watanabe M
Hiroshima Univ. Higashi‐hiroshima Jpn
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Nakamura Yuji
Department of Pharmacology, School of Medicine, Toho University, Japan
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Ikeda Y
Seh Isobe R&d Center Shin-etsu Handotai Co. Ltd.
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Tanaka Hiroaki
Department of Cardiovascular Medicine, Tottori University Faculty of Medicine
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Nakamura Yuji
The Division of Cardiolagy, National Medical Center Hospital
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Watanabe Mahiko
Department Of Applied Physics And Chemistry Faculty Of Engineering Hiroshima University
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Nagase Masanori
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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SAITO WATARU
Department of Orthopaedic Surgery, Kitasato University, School of Medicine
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Saito Wataru
Department Of Ophthalmology And Visual Sciences Hokkaido University Graduate School Of Medicine
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WATANABE Masahiro
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Ikeda Yoshihiro
Department Of Cardiology Himeji Cardiovascular Center
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Ikeda Yoshihiro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Tanaka Hiroaki
Department Of Cardiovascular Medicine Tottori University Fuculty Of Medicine
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Zhang B
Research Center For Nano-device And System Nagoya Institute Of Technology
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KOKUBO Atsushi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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FUNAYAMA Miyako
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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MORITA Takenori
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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NAKAMURA Hifumi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Nakamura Hifumi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Furuya K
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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Funayama Miyako
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Morita Takenori
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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MORITA Tatsuo
Department of Physical Electronics, Tokyo Institute of Technology
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NAGATSUKA Hiromi
Department of Physical Electronics, Tokyo Institute of Technology
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ARAI Toshiki
the Department of Physical Electronics, Tokyo Institute of Technology
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YAMAGAMI Shigeharu
the Department of Physical Electronics, Tokyo Institute of Technology
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OKUDA Yoshifumi
the Department of Physical Electronics, Tokyo Institute of Technology
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HARADA Yoshimichi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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KOKUBO Atsushi
Depaetment of Electrical and Electronic Engineering, Tokyo Institute of Technology
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HONGO Hiroo
Depaetment of Electrical and Electronic Engineering, Tokyo Institute of Technology
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MIYAMOTO Yasuyuki
Depaetment of Electrical and Electronic Engineering, Tokyo Institute of Technology
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FURUYA Kazuhito
Depaetment of Electrical and Electronic Engineering, Tokyo Institute of Technology
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MATSUNUMA Takeshi
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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TAKEMURA Riichiro
the Department of Elec trical and Electronic Engineering, Faculty of Engineering, Tokyo Institute of
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NAGAO Chuma
Department of Electrical and Electric Engineering, Tokyo Institute of Technology
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OTAKE Toshihiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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YOSHINAGA Jiroo
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Yoshinaga Jiroo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Nagatsuka Hiromi
Department Of Physical Electronics Tokyo Institute Of Technology
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Matsunuma T
Tokyo Inst. Technol. Tokyo Jpn
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Matsunuma Takeshi
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Okuda Yoshifumi
The Department Of Physical Electronics Tokyo Institute Of Technology
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KIKEGAWA Nobutaka
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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ZHANG Bingyang
Quantum Effect Electronics Research Center, Tokyo Institute of Technology
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WATANABE Masahiro
Quantum Effect Electronics Research Center, Tokyo Institute of Technology
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Morita Tatsuo
Department Of Physical Electronics Tokyo Institute Of Technology
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Morita Tatsuo
Department Of Applied Physics Waseda University
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Nakamura Yuji
Department Of Materials Engineering Graduate School Of Engineering The University Of Tokyo:crest Jap
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Nagao Chuma
Department Of Electrical And Electric Engineering Tokyo Institute Of Technology
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KOIZUMI Ryuya
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Kikegawa Nobutaka
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Koizumi Ryuya
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Sakai Norio
Department Of Developmental Medicine (pediatrics) D-5 Osaka University Graduate School Of Medicine.
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Saito Wataru
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Otake Toshihiko
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Sakai Norio
Department Of Biopharmaceutics And Drug Rational Research Center School Of Pharmacy Tokyo University
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Tanaka Hiroaki
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Tanaka Hiroaki
Department Of Biology Aichi University Of Education
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Nakamura Yuji
Department Of Agricultural Chemistry Faculty Of Agriculture Kyushu University
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Nakamura Yuji
The Department Of Internal Medicine International Medical Center Of Japan
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Watanabe Masahiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
著作論文
- Wrapped Alignment Marks for Fabrication of Interference/Diffraction Hot Electron Devices
- W/Cr/Au/SiO_2 Composite Alignment Mark for Fabrication of Interference/Diffraction Hot Electron Devices
- Nanostrueture Alignment for Hot Electron Interference/Diffraction Devices
- Ultrafine Fabrication Technique for Hot Electron Interference/Diffraction Devices
- Effect of Spacer Layer Thickness on Energy Level Width Narrowing in GaInAs/InP Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy
- Transport Anisotropy of Si Delta-Doped Layer in InP Grown by OMVPE
- Febrication of InP/GaInAs Double Heterojunction Bipolar Transistors with a 0.1-μm-Wide Emitter : Semiconductors
- InP DHBT with 0.5μm Wide Emitter alongDirection toward BM-HBT with Narrow Emitter(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Reduction of Base-Collector Capacitance inSubmicron InP/GalnAs Heterojunction Bipolar Transistors with Buried Tungsten Wires : Semiconductors
- Peak Width Analysis of Current-Voltage Characteristics of Triple-Barrier Resonant Tunneling Diodes
- First Fabrication of GaInAs/InP Buried Metal Heterojunction Bipolar Transistor and Reduction of Base-Collector Capacitance
- A 25-nm-pitch GaInAs/InP Buried Structure Using Calixarene Resist
- Characterization of GaInAs/InP Triple-Barrier Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy for High-Temperature Estimation of Phase Coherent Length of Electrons
- Seventy-nm-Pitch Patterning on CaF_2 by e-beam Exposure
- Current-Voltage Characteristics of Triple-Barrier Resonant Tunnnel Diodes Including Coherent and Incoherent Tunneling Processes (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- High Temperature Estimation of Phase Coherent Length of Hot Electron Using GaInAs/InP Triple-Barrier Resonant Tunneling Diodes Grown by OMVPE
- Monolayer Steps Formation in InP and GaInAs by OMVPE and Reduction of Resonant Energy Width in GaInAs/InP RTDs
- Electrical Properties of 100 nm Pitch Cr/Au Fine Electrodes with 40 nm Width on GaInAs
- Shortening of Detection Time for Observation of Hot Electron Spatial Distribution by Scanning Hot Electron Microscopy
- Evaluation of Hot Electron Coherent Length Using Well Width Dependence of the Resonance Characteristics of Resonant Tunneling Diodes
- Estimation of Phase Coherent Length of Hot Electrons in GaInAs Using Resonant Tunneling Diodes
- Possibility of High-Temperature Evaluation of Phase Coherent Length of Hot Electrons in Triple-Barrier Resonant Tunneling Diodes