Furuya K | Department Of Physical Electronics Tokyo Institute Of Technology
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概要
関連著者
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FURUYA Kazuhito
Department of Physical Electronics, Tokyo Institute of Technology
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Furuya K
Department Of Physical Electronics Tokyo Institute Of Technology
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MIYAMOTO Yasuyuki
Department of Physical Electronics, Tokyo Institute of Technology
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Miyamoto Y
Department Of Physical Electronics Tokyo Institute Of Technology
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Furuya Kazuhito
Department Of Electrical And Electronic Engineering
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
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Suhara M
Tokyo Metropolitan Univ. Tokyo Jpn
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SUHARA Michihiko
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Hongo Hiroo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
著作論文
- Wrapped Alignment Marks for Fabrication of Interference/Diffraction Hot Electron Devices
- W/Cr/Au/SiO_2 Composite Alignment Mark for Fabrication of Interference/Diffraction Hot Electron Devices
- Nanostrueture Alignment for Hot Electron Interference/Diffraction Devices
- Ultrafine Fabrication Technique for Hot Electron Interference/Diffraction Devices
- Effect of Spacer Layer Thickness on Energy Level Width Narrowing in GaInAs/InP Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy
- Transport Anisotropy of Si Delta-Doped Layer in InP Grown by OMVPE
- Febrication of InP/GaInAs Double Heterojunction Bipolar Transistors with a 0.1-μm-Wide Emitter : Semiconductors
- InP DHBT with 0.5μm Wide Emitter alongDirection toward BM-HBT with Narrow Emitter(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Reduction of Base-Collector Capacitance inSubmicron InP/GalnAs Heterojunction Bipolar Transistors with Buried Tungsten Wires : Semiconductors
- Peak Width Analysis of Current-Voltage Characteristics of Triple-Barrier Resonant Tunneling Diodes