InP DHBT with 0.5μm Wide Emitter along<010>Direction toward BM-HBT with Narrow Emitter(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
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概要
- 論文の詳細を見る
Fabrication process for narrow emitter along<010>direction in heterojunction bipolar transistor fully drawn by electron beam lithography was studied.Emitter structure of a 100nm width was formed by using epitaxial structure with 30-nm-thick InP layer of emitter. Transistor operation of devices with 0.5-μm-wide emitter was confirmed. This process can be applied to a buried metal heterojunction bipolar transistor(BM-HBT)with narrow emitter, resulting in high-speed operation of BM-HBT.
- 社団法人電子情報通信学会の論文
- 2001-10-01
著者
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MIYAMOTO Yasuyuki
Department of Physical Electronics, Tokyo Institute of Technology
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FURUYA Kazuhito
Department of Physical Electronics, Tokyo Institute of Technology
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Arai T
Department Of Physical Electronics Tokyo Institute Of Technology
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Miyamoto Y
Department Of Physical Electronics Tokyo Institute Of Technology
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ARAI Toshiki
the Department of Physical Electronics, Tokyo Institute of Technology
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YAMAGAMI Shigeharu
the Department of Physical Electronics, Tokyo Institute of Technology
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OKUDA Yoshifumi
the Department of Physical Electronics, Tokyo Institute of Technology
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HARADA Yoshimichi
the Department of Physical Electronics, Tokyo Institute of Technology
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MIYAMOTO Yasuyuki
the Department of Physical Electronics, Tokyo Institute of Technology
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FURUYA Kazuhito
the Department of Physical Electronics, Tokyo Institute of Technology
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Okuda Yoshifumi
The Department Of Physical Electronics Tokyo Institute Of Technology
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YAMAGAMI Shigeharu
Silicon Systems Research Labs.
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Furuya K
Department Of Physical Electronics Tokyo Institute Of Technology
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Harada Y
Univ. Hyogo Himeji‐shi Jpn
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