A Study of Native Defects in Ag-doped HgCdTe by Positron Annihilation
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-11-15
著者
-
Ebe Hiroji
Nanoelectronics Collaborative Research Center (ncrc) Institute Of Industrial Science (iis) The Unive
-
Ebe Hiroji
Fujitsu Laboratories Ltd.
-
MIKADO Tomohisa
Electrotechnical Laboratory
-
TANIGAWA Shoichiro
Institute of Materials Science, The University of Tsukuba
-
UEDONO Akira
Institute of Materials Science, University of Tsukuba
-
Uedono A
Univ. Tsukuba Tsukuba Jpn
-
Uedono Akira
Institute Of Applied Physics University Of Tsukuba
-
Ebe H
Univ. Tokyo Tokyo Jpn
-
Miyamoto Yoshihiro
Fujitsu Laboratories Ltd.
-
Miyamoto Y
Kyushu Univ. Fukuoka Jpn
-
Moriya T
Institute Of Material Science University Of Tsukuba
-
MIKADO Tomohisa
National Institute of Advanced Industrial Science and Technology (AIST)
-
Yamamoto K
Univ. Of Tsukuba
-
MORIYA Tsuyoshi
Institute of Materials Science, University of Tsukuba
-
YAMAMOTO Kosaku
Fujitsu Laboratory Ltd.
-
OZAKI Kazuo
Fujitsu Laboratories, Ltd.
-
Tanigawa Shoichiro
Institute Of Applied Physics University Of Tsukuba
-
Moriya Tsuyoshi
Institute Of Material Science University Of Tsukuba
-
Yamamoto K
Kaneka Corporation
-
Moriya T
Tokyo Metropolitan University Graduate School Of Engineering
-
TOYAMA Masaharu
Toshiba Research and Development Center
-
Ozaki K
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
-
Tanigawa S
Institute Of Applied Physics University Of Tsukuba
-
Miyamoto Y
Department Of Physical Electronics Tokyo Institute Of Technology
-
Yamamoto K
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
-
Mikado T
Electrotechnical Laboratory
-
Mikado Tomohisa
Institute Of Materials Science University Of Tsukuba
-
Yamamoto K
Saga Univ. Saga Jpn
-
Uedono Akira
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
関連論文
- Optical Polarization Properties of InAs/GaAs Quantum Dot Semiconductor Optical Amplifier
- Polarization-Independent Photoluminescence from Columnar InAs/GaAs Self-Assembled Quantum Dots : Semiconductors
- Characterization of Diamond Films by Means of a Pulsed Positron Beam
- Characterization of Diamond Films Synthesized on Si from a Gas Phase in Microwave Plasma by Slow Positrons
- Study on Momentum Density of Electrons and Fermi Surface in Niobium by Positron Annihilation
- Defect Production in Phosphorus Ion-Implanted SiO_2(43 nm)/Si Studied by a Variable-Energy Positron Beam
- Vacancy-Type Defects in As^+-Implanted SiO_2(43 nm)/Si Proved with Slow Positrons
- Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines
- Positron Annihilation in Proton Irradiated Czochralski-Grown Si
- Free Electron Laser Oscillation down to the Deep UV Range Using a Small-Scale Storage Ring
- Lasing at 352 nm of the NIJI-IV Storage-Ring Free-Electron Laser
- Characterization of Separation-by-Implanted-Oxygen Wafers with Monoenergetic Positron Beams
- Controlling Polarization of 1.55-μm Columnar InAs Quantum Dots with Highly Tensile-Strained InGaAsP Barriers on InP(001)
- Automatically-Controlled C-Band Wavelength Conversion with Constant Output Power Based on Four-Wave Mixing in SOA's(Lasers, Quantum Electronics)
- Temperature-Insensitive Eye-Opening under 10-Gb/s Modulation of 1.3-μm P-Doped Quantum-Dot Lasers without Current Adjustments
- Control of In_xGa_As Capping Layer Induced Optical Polarization in Edge-Emitting Photoluminescence of InAs Quantum Dots
- Fabrication of Dye-Dispersed Optical-Quality Polymer Films by Coprecipitation of Cyanine Dye with Polymers
- Anomalous Association of 3, 3' -Diethyloxadicarbocyanine Iodide in Saturated Solutions of Acetone and Water
- Fabrication of Dye Dissolved Polymer Film Using Thermal Treatment under Ultra High Vacuum
- Noncrystalline Condensation of Densely Dissolved Optically Nonlinear Organic Compound in Polymer Matrices
- Nonlinear Refractive Index of Organic Materials under High Pressure
- Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrates by Metalorganic Vapor Phase Epitaxy
- Nonsaturated Global Pinning Force in Superconducting Nb-Ta with Normal Precipitates
- Characterizing Metal-Oxide Semiconductor Structures Consisting of HfSiO_x as Gate Dielectrics using Monoenergetic Positron Beams
- Defects in Metalorganic Chemical Vapor Deposition Epitaxy-Grown ZnSe Films on GaAs Investigated by Monoenergetic Positrons
- The Defect Characterization of Heavily Si-doped Molecular Beam Epitaxy-Grown GaAs by the Monoenergetic Positron Method
- Defects Introduced by MeV-Energy Ion Implantation into Si Probed by a Monoenergetic Positron Beam
- Variable-Energy Positron Studies of Vacancy-Type Defects in TiN Films on Si
- Electron Beam Qualities with and without Free Electron Laser Oscillations in the Compact Storage Ring NIJI-IV
- Amorphization Processes and Structural Relaxation in Ion Implanted Si
- Characterization of Column III Vacancies in Al_xGa_As/GaAs Heterostructures Grown by Molecular Beam Epitaxy through Slow Positrons
- Silicide-Formation-Induced Defects in Si Substrates in Ti/Si and Ni/Si Systems by a Monoenergetic Positron Beam
- Effect of Annealing Method on Vacancy-Type Defects in Si-Implanted GaAs Studied by a Slow Positron Beam
- The Effect of Surface Oxides on the Creation of Point Defects in GaAs Studied by Slow Positron Beam
- Defect Evaluation of Heavily P-Doped Si Epitaxial Films Grown at Low Temperature
- Identification of Vacancy-Type Defects in Molecular Beam Epitaxy-Grown GaAs Using a Slow Positron Beam
- Effects of the Fermi Level on Defects in Be^+-Implanted GaAs Studied by a Monoenergetic Positron Beam
- Study of Point Defects in Bulk ZnSe Grown by Nonstoichiometric Annealing
- Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
- Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
- Oxygen Microclusters in Czochralski-Grown Si Probed by Positron Annihilation
- Positron Annihilation in Vitreous Silica Glasses
- Focusing Method in High-Impedance Material using Transmission Line Coupler : Ultrasonic Transmission Line Coupling Method
- Local Bonding Structure of High-Stress Silicon Nitride Film modified by UV Curing for Strained-Silicon Technology beyond 45nm Node SoC Devices
- Defects in Ion Implanted Hg_Cd_Te Probed by Monoenergetic Positron Beams
- Defects and Their Annealing Properties in B^+-Implanted Hg_Cd_Te Studied by Positron Annihilation
- A Study of Native Defects in Ag-doped HgCdTe by Positron Annihilation
- Reversible Photodissociation of Hexacarbonyl Tungsten in Cross-Linked Polymers
- Formation Mechanism of Interstitial Hydrogen Molecules in Crystalline Silicon
- Three Different Forms of Hydrogen Molecules in Silicon
- Annealing Properties of Defects in B^+- and F^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Fluorine-Related Defects in BF^+_2-Implanted Si Probed by Monoenergetic Positron Beams
- Positron Annihilation in Germanium in Thermal Equilibrium at High Temperature
- Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Formation of Oxygen-Related Defects Enhanced by Fluorine in BF^+_2-Implanted Si Studied by a Monoenergetic Positron Beam
- Characterization of Metal/GaAs Interfaces by Monoenergetic Positron Beam
- Evolution of a Storage Ring Free Electron Laser Micropulse in a Macropulse Zone
- Oxygen-Related Defects Introduced by As^+-Implantation through Cap Layers in Si Probed by Monoenergetic Positron Beams
- Investigation of Vacancy-Type Defects in P^+-Implanted 6H-SiC Using Monoenergetic Positron Beams
- Defects in TiN Films Probed by Monoenergetic Positron Beams
- Vacancy-Type Defects in Ion-Implanted Diamonds Probed by Monoenergetic Positron Beams
- Defects in Heavily Phosphorus-Doped Si Epitaxial Films Probed by Monoenergetic Positron Beams
- Characterization of Hydrogenated Amorphous Silicon Films by a Pulsed Positron Beam
- Development of a New System for Measuring Skull Bone Thickness by the Pulse compression Method
- Ultrasonic Flaw Detection for High Impedance Materials Using a Transmission Line Coupling Method
- High Signal-to-Noise Ratio Ultrasonic Point Detection Method using a Fused Quartz Rod as a Pulse Compression Filter and a Sensor
- Wide View-Angle Imaging Obtained by Compounding Multidirection Images through a Narrow Window
- Tungsten Photochemical Vapor Deposition Mechanism in WF_6+H_2 System : II. Gas-Molecule Adspecies Collision Model
- Thermal Equilibrium Defects in Anthracene Probed by Positron Annihilation
- Defects in Czochralski-Grown Silicon Crystals Investigated by Positron Annihilation
- Defects Introduced by Ar Plasma Exposure in GaAs Probed by Monoenergetic Positron Beam
- Slow Positron Pulsing System for Variable Energy Positron Lifetime Spectroscopy
- Decay Rate Plot of Stored Beam Current and Touschek Limit of Current-Lifetime Product
- Emission-Angle Dependence of Electron Transmission through Thick Layers with Initial Energy of 24.8 MeV
- Characterization of Hf_Al_O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
- Tungsten Photochemical Vapor Deposition Mechanism in WF_6+H_2 System : I. Adspecies Excitation Model
- Electrical Transport and Electron Spin Resonance in Electron-Beam-Irradiated Polyacetylene in the Presence of SF_6 Gas
- Electrical and Optical Properties of Polythiophene Irradiated with Electron Beam in the Presence of SF_6 and Their Application as Radiation Detector
- Compatibilization of Metallocene Polyethylene/Polyamide Blends with Maleic Anhydride Studied by Positron Annihilation
- Vacancy-Type Defects in Be-Implanted InP
- Free Volume in Polycarbonate Studied by Positron Annihilation : Effects of Free Radicals and Trapped Electrons on Positronium Formation : Structure and Mechanical and Thermal Properties of Condensed Matter
- Evaluation of SOI Substrates by Positron Annihilation
- Evaluation of SOI Substrates by Positron Annihilation
- Critical Current Density of Superconducting Pb-Bi Alloys with Normal Bi Precipitates in a Longitudinal Magnetic Field
- Average Energy Loss of 24.8-MeV Electrons after Passing through and Backscattering from Thick Layers of C,Al,Cu,and Pb
- Anomalous Energy Loss and Straggling of 24.8 MeV Electrons through Thin single Crystals of Germanium
- The Anomalous Temperature Dependence of Positron Annihilation in Dilute Al-Li and Al-Mg Alloys
- Oxygen Clusters in Quenched Czochralski-Si Studied by Infrared Spectroscopy and Positron Annihilation
- Damage to the Silicon Substrate by Reactive Ion Etching Detected by a Slow Positron Beam
- Characterization of Grown-in Dislocations in Benzophenone Single Crystals by X-Ray Topography
- Reduction of Dislocation Density in Impurity-Doped GaAs Grown on Si Substrate by Molecular Beam Epitaxy
- Defects Induced by Wafer Processing and Thermal Treatment in InP Probed with Monoenergetic Positrons
- Positron Study of Vacancy-Type Defects Induced by Heavy Doping into MBE-Grown GaAs
- Homoepitaxial Growth of SrTiO_3 in an Ultrahigh Vacuum with Automatic Feeding of Oxygen from the Substrate at Temperatures as Low as 370℃ : Surfaces, Interfaces, and Films
- Defects in SiO_2 /Si Structures Probed by Using a Monoenergetic Positron Beam
- Controlling Polarization in Quantum-dot Semiconductor Optical Amplifiers
- CCD with Meander Channel
- Slow Positron Beam Apparatus for Surface and Subsurface Analysis of Samples in Air
- Controlling Polarization of 1.55-μm Columnar InAs Quantum Dots with Highly Tensile-Strained InGaAsP Barriers on InP(001)
- Fluorine-Related Defects in BF2+-Implanted Si Probed by Monoenergetic Positron Beams