Positron Study of Vacancy-Type Defects Induced by Heavy Doping into MBE-Grown GaAs
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概要
- 論文の詳細を見る
Variable-energy positron beam studies have been carried out on heavily Si-doped GaAs/AlGaAs/GaAs specimens prepared by molecular beam epitaxy. From the measurements of Doppler broadening profiles of the positron annihilation as a function of the incident positron energy, it was found that Ga vacancies with very high concentration are introduced in the GaAs layer by the heavy doping of Si. It was concluded that a Ga vacancy acts to reduce the concentration of free carriers.
- 社団法人応用物理学会の論文
- 1990-02-20
著者
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TANIGAWA Shoichiro
Institute of Materials Science, The University of Tsukuba
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UEDONO Akira
Institute of Materials Science, University of Tsukuba
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Uedono Akira
Institute Of Applied Physics University Of Tsukuba
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Uedono Akira
Institute Of Materials Science University Of Tsukuba:(present Address) Department Of Physics Yokoham
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Tanigawa Shoichiro
Institute Of Applied Physics University Of Tsukuba
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Uedono Akira
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
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