Amorphization Processes and Structural Relaxation in Ion Implanted Si
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-01-30
著者
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TANIGAWA Shoichiro
Institute of Materials Science, The University of Tsukuba
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WEI Long
Institute of Materials Science, University of Tsukuba
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Wei Long
Institute Of Materials Science University Of Tsukuba
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MOTOOKA Teruaki
Institute of Applied Physics, University of Tsukuba
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TOKUYAMA Takashi
Institute of Applied Physics, University of Tsukuba
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KOBAYASHI Fumihiko
Institute of Applied Physics, University of Tsukuba
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HIROYAMA Yuichi
Institute of Applied Physics, University of Tsukuba
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Tanigawa Shoichiro
Institute Of Applied Physics University Of Tsukuba
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Motooka T
Kyushu Univ. Fukuoka Jpn
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Tokuyama T
Institute Of Applied Physics University Of Tsukuba
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Hiroyama Y
Kyushu Univ. Fukuoka Jpn
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Kobayashi F
Electrotechnical Lab. Ibaraki Jpn
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TANIGAWA Shoichiro
Institute of Materials Science, University of Tsukuba
関連論文
- Characterization of Diamond Films by Means of a Pulsed Positron Beam
- Characterization of Diamond Films Synthesized on Si from a Gas Phase in Microwave Plasma by Slow Positrons
- Study on Momentum Density of Electrons and Fermi Surface in Niobium by Positron Annihilation
- Defect Production in Phosphorus Ion-Implanted SiO_2(43 nm)/Si Studied by a Variable-Energy Positron Beam
- Vacancy-Type Defects in As^+-Implanted SiO_2(43 nm)/Si Proved with Slow Positrons
- Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines
- Positron Annihilation in Proton Irradiated Czochralski-Grown Si
- Characterization of Separation-by-Implanted-Oxygen Wafers with Monoenergetic Positron Beams
- Selective Dissociative Ionization of SiH_4, Si_2H_6 and Si_3H_8 by Electron Impact in Supersonic Free Jets
- Amorphization Processes in Ion Implanted Si : Temperature Dependence
- Defects in Metalorganic Chemical Vapor Deposition Epitaxy-Grown ZnSe Films on GaAs Investigated by Monoenergetic Positrons
- The Defect Characterization of Heavily Si-doped Molecular Beam Epitaxy-Grown GaAs by the Monoenergetic Positron Method
- Defects Introduced by MeV-Energy Ion Implantation into Si Probed by a Monoenergetic Positron Beam
- Variable-Energy Positron Studies of Vacancy-Type Defects in TiN Films on Si
- Amorphization Processes and Structural Relaxation in Ion Implanted Si
- Characterization of Column III Vacancies in Al_xGa_As/GaAs Heterostructures Grown by Molecular Beam Epitaxy through Slow Positrons
- Silicide-Formation-Induced Defects in Si Substrates in Ti/Si and Ni/Si Systems by a Monoenergetic Positron Beam
- Effect of Annealing Method on Vacancy-Type Defects in Si-Implanted GaAs Studied by a Slow Positron Beam
- The Effect of Surface Oxides on the Creation of Point Defects in GaAs Studied by Slow Positron Beam
- Defect Evaluation of Heavily P-Doped Si Epitaxial Films Grown at Low Temperature
- Identification of Vacancy-Type Defects in Molecular Beam Epitaxy-Grown GaAs Using a Slow Positron Beam
- Effects of the Fermi Level on Defects in Be^+-Implanted GaAs Studied by a Monoenergetic Positron Beam
- Study of Point Defects in Bulk ZnSe Grown by Nonstoichiometric Annealing
- Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
- Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
- Oxygen Microclusters in Czochralski-Grown Si Probed by Positron Annihilation
- Positron Annihilation in Vitreous Silica Glasses
- Defects in Ion Implanted Hg_Cd_Te Probed by Monoenergetic Positron Beams
- Defects and Their Annealing Properties in B^+-Implanted Hg_Cd_Te Studied by Positron Annihilation
- A Study of Native Defects in Ag-doped HgCdTe by Positron Annihilation
- Annealing Properties of Defects in B^+- and F^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Fluorine-Related Defects in BF^+_2-Implanted Si Probed by Monoenergetic Positron Beams
- Positron Annihilation in Germanium in Thermal Equilibrium at High Temperature
- Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Formation of Oxygen-Related Defects Enhanced by Fluorine in BF^+_2-Implanted Si Studied by a Monoenergetic Positron Beam
- Characterization of Metal/GaAs Interfaces by Monoenergetic Positron Beam
- Oxygen-Related Defects Introduced by As^+-Implantation through Cap Layers in Si Probed by Monoenergetic Positron Beams
- Investigation of Vacancy-Type Defects in P^+-Implanted 6H-SiC Using Monoenergetic Positron Beams
- Defects in TiN Films Probed by Monoenergetic Positron Beams
- Vacancy-Type Defects in Ion-Implanted Diamonds Probed by Monoenergetic Positron Beams
- Defects in Heavily Phosphorus-Doped Si Epitaxial Films Probed by Monoenergetic Positron Beams
- Thermal Equilibrium Defects in Anthracene Probed by Positron Annihilation
- Defects in Czochralski-Grown Silicon Crystals Investigated by Positron Annihilation
- Defects Introduced by Ar Plasma Exposure in GaAs Probed by Monoenergetic Positron Beam
- Raman Spectroscopy and Positron Lifetime Studies of Structural Relaxation and Defect Evolution in Amorphous Silicon
- Role of Vacancy-Type Defects during Structural Relaxation of Amorphous Si
- Vacancy-Type Defects in Be-Implanted InP
- Evaluation of SOI Substrates by Positron Annihilation
- Evaluation of SOI Substrates by Positron Annihilation
- The Anomalous Temperature Dependence of Positron Annihilation in Dilute Al-Li and Al-Mg Alloys
- Damage to the Silicon Substrate by Reactive Ion Etching Detected by a Slow Positron Beam
- Reduction of Dislocation Density in Impurity-Doped GaAs Grown on Si Substrate by Molecular Beam Epitaxy
- Defects Induced by Wafer Processing and Thermal Treatment in InP Probed with Monoenergetic Positrons
- Positron Study of Vacancy-Type Defects Induced by Heavy Doping into MBE-Grown GaAs
- Defects in SiO_2 /Si Structures Probed by Using a Monoenergetic Positron Beam
- Positron Study of Electron Momentum Density and Fermi Surface in Titanium and Zirconium
- Positron Annihilation in Germanium in Thermal Equilibrium at High Temperature
- Fluorine-Related Defects in BF2+-Implanted Si Probed by Monoenergetic Positron Beams
- Thermal Equilibrium Defects in Anthracene Probed by Positron Annihilation
- Evaluation of SOI Substrates by Positron Annihilation
- A Study of Vacancy-Type Defects in B+-Implanted SiO2/Si by a Slow Positron Beam