TOKUYAMA Takashi | Institute of Applied Physics, University of Tsukuba

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概要

• 同名の論文著者
• Institute of Applied Physics, University of Tsukubaの論文著者

関連著者

• MOTOOKA Teruaki

  Institute of Applied Physics, University of Tsukuba

• TOKUYAMA Takashi

  Institute of Applied Physics, University of Tsukuba

• Motooka T

  Kyushu Univ. Fukuoka Jpn

• Tokuyama T

  Institute Of Applied Physics University Of Tsukuba

• Fons P

  Optoelectronic Materials And Devices Group Photonics Research Institute National Institute Of Advanc

• Fons P

  National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn

• Fons Paul

  Institute Of Applied Physics University Of Tsukuba

• KOBAYASHI Fumihiko

  Institute of Applied Physics, University of Tsukuba

• Kobayashi F

  Electrotechnical Lab. Ibaraki Jpn

• TANIGAWA Shoichiro

  Institute of Materials Science, The University of Tsukuba

• WEI Long

  Institute of Materials Science, University of Tsukuba

• Wei Long

  Institute Of Materials Science University Of Tsukuba

• Abe Hiroshi

  Institute for Materials Research, Tohoku University

• MOTOOKA Teruaki

  University of Tsukuba

• KOBAYASHI Fumihiko

  University of Tsukuba

• FONS Paul

  University of Tsukuba

• TOKUYAMA Takashi

  University of Tsukuba

• SUZUKI Tadashi

  Device Development Center, Hitachi, Lid.

• NATSUAKI Nobuyoshi

  Device Development Center, Hitachi, Lid.

• HIROYAMA Yuichi

  Institute of Applied Physics, University of Tsukuba

• Tanigawa Shoichiro

  Institute Of Applied Physics University Of Tsukuba

• Hiroyama Y

  Kyushu Univ. Fukuoka Jpn

• Natsuaki Nobuyoshi

  Device Development Center Hitachi Lid.

• Abe Hiroshi

  Institute Of Applied Physics University Of Tsukuba

• Suzuki Tadashi

  Device Development Center Hitachi Lid.

• TANIGAWA Shoichiro

  Institute of Materials Science, University of Tsukuba

• Abe Hiroshi

  Institute of Applied Physics, University of Tsukuba

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著作論文

• Selective Dissociative Ionization of SiH_4, Si_2H_6 and Si_3H_8 by Electron Impact in Supersonic Free Jets
• Amorphization Processes in Ion Implanted Si : Temperature Dependence
• Amorphization Processes and Structural Relaxation in Ion Implanted Si

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