Wei Long | Institute Of Materials Science University Of Tsukuba

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概要

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著作論文

Defect Production in Phosphorus Ion-Implanted SiO_2(43 nm)/Si Studied by a Variable-Energy Positron Beam
Characterization of Separation-by-Implanted-Oxygen Wafers with Monoenergetic Positron Beams
Defects in Metalorganic Chemical Vapor Deposition Epitaxy-Grown ZnSe Films on GaAs Investigated by Monoenergetic Positrons
The Defect Characterization of Heavily Si-doped Molecular Beam Epitaxy-Grown GaAs by the Monoenergetic Positron Method
Defects Introduced by MeV-Energy Ion Implantation into Si Probed by a Monoenergetic Positron Beam
Variable-Energy Positron Studies of Vacancy-Type Defects in TiN Films on Si
Amorphization Processes and Structural Relaxation in Ion Implanted Si
Characterization of Column III Vacancies in Al_xGa_As/GaAs Heterostructures Grown by Molecular Beam Epitaxy through Slow Positrons
Silicide-Formation-Induced Defects in Si Substrates in Ti/Si and Ni/Si Systems by a Monoenergetic Positron Beam
Effect of Annealing Method on Vacancy-Type Defects in Si-Implanted GaAs Studied by a Slow Positron Beam
The Effect of Surface Oxides on the Creation of Point Defects in GaAs Studied by Slow Positron Beam
Defect Evaluation of Heavily P-Doped Si Epitaxial Films Grown at Low Temperature
Identification of Vacancy-Type Defects in Molecular Beam Epitaxy-Grown GaAs Using a Slow Positron Beam
Effects of the Fermi Level on Defects in Be^+-Implanted GaAs Studied by a Monoenergetic Positron Beam
Oxygen Microclusters in Czochralski-Grown Si Probed by Positron Annihilation
Defects in Czochralski-Grown Silicon Crystals Investigated by Positron Annihilation
Vacancy-Type Defects in Be-Implanted InP
Damage to the Silicon Substrate by Reactive Ion Etching Detected by a Slow Positron Beam
Defects in SiO_2 /Si Structures Probed by Using a Monoenergetic Positron Beam

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