Oigawa Haruhiro | Institute of Materials Science, University of Tsukuba
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概要
関連著者
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Oigawa Haruhiro
Institute of Materials Science, University of Tsukuba
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Oigawa Haruhiro
Institute Of Materials Science University Of Tsukuba
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Oigawa Haruhiro
Institute of Applied Physics, 21th Century COE, NANO project, University of Tsukuba, Tsukuba 305-8573, Japan
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Nannichi Yasuo
Institute of Materials Science, University of Tsukuba
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Nannichi Yasuo
Institute Of Materials Science And Center For Tara Tsukuba Advanced Research Alliance University Of
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Oigawa H
Institute Of Applied Physics 21th Century Coe Nano Project University Of Tsukuba
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Nannichi Yasuo
University Of Tsukuba
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Nannichi Yasuo
Institute Of Materials Science Institute Of Applied Physics University Of Tsukuba
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Fan J‐f
Riken The Institute Of Physical And Chemical Research
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Fan Jia-fa
Institute Of Materials Science University Of Tsukuba:(present Address)insitute Of Physical And Chemi
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Fan Jia-fa
Institute Of Materials Science University Of Tsukuba
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SHIGEKAWA Hidemi
Institute of Applied Physics, University of Tsukuba
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Shigekawa Hidemi
Institute Of Applied Physics University Of Tsukuba
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重川 秀実
筑波大学物理工学系
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重川 秀実
Univ. Tsukuba Tsukuba
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Shigekawa Hidemi
Institute Of Applied Physics And Crest Japan Science And Technology Corporation (jst) University Of
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Shigekawa Hidemi
Institute Of Applied Physics And 21st Coe University Of Tsukuba
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Oshima M
Department Of Applied Chemistry The University Of Tokyo
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Oshima M
Univ. Tokyo Tokyo
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Oshima M
Department Of Engineering The University Of Tokyo
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Oshima Masaharu
Ntt Applied Electronics Laboratories
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MIYAKE Koji
Institute of Applied Physics, CREST, Japan Science and Technology Corporation (JST), University of T
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Miyake K
Institute Of Applied Physics Crest Japan Science And Technology Corporation (jst) University Of Tsuk
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SUGAHARA Hirohiko
NTT Applied Electronics Laboratories
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Komiyama M
Research Center For Advanced Science And Technology The University Of Tokyo
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Sugahara H
Univ. Tsukuba Ibaraki Jpn
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Miyake Koji
Institute Of Applied Physics And Crest Japan Science And Technology Corporation (jst) University Of
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ANDO KOJI
Department of Surgery and Science, Graduate School of Medical Sciences, Kyushu University
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KOMA Atsushi
Department of Chemistry, The University of Tokyo
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SAIKI Koichiro
Department of Chemistry, The University of Tokyo
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TANIGAWA Shoichiro
Institute of Materials Science, The University of Tsukuba
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AONO Masakazu
Physical and Chemical Research (RIKEN)
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WEI Long
Institute of Materials Science, University of Tsukuba
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Kawabe Mitsuo
Institute Of Materials Science University Of Tsukuba
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Kawabe Mitsuo
Institute Of Applied Physics University Of Tsukuba
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Aono Masakazu
Riken The Institute Of Physical And Chemical Research
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Aono Masakazu
The Institute Of Physical And Chemical Research (riken)
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Takeuchi Osamu
Institute Of Applied Physics University Of Tsukuba
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Wei L
Institute Of Materials Science University Of Tsukuba
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LI Yan
Institute of Natural Medicine, Toyama Medical and Pharmaceutical University
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Wei Long
Institute Of Materials Science University Of Tsukuba
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YOSHIZAKI Ryozo
Institute of Applied Physics,University of Tsukuba
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NAGAMURA Toshihiko
UNISOKU Co., Ltd.
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Takeuchi O
Institute Of Applied Physics University Of Tsukuba
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Lee Jong-Lam
Institute of Materials Science, University of Tsukuba
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Li Y
Inst. Molecular Sci. Okazaki Jpn
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Kaikoh Takashi
Institute of Applied Physics, Center for TARA, CREST, Japan Science and Technology Corporation (JST)
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Ishida Masahiko
Institute Of Materials Science University Of Tsukuba
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Lee J‐l
Pohang Univ. Sci. And Technol. (postech) Pohang Kor
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Imayoshi Takahiro
Department of Applied Physics, University of Tokyo
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Tokumoto Hiroshi
Joint Research Center for Atom Technology, National Institute for Advanced Interdisciplinary Researc
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Kimura Tomohiko
Institute of Applied Physics and CREST, Japan Science Technology Cooperation, University of Tsukuba
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Hata Kenji
Institute of Applied Physics and CREST, Japan Science Technology Cooperation, University of Tsukuba
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YOSHIDA Shoji
Institute of Applied Physics, University of Tsukuba, 21st COE, CREST-JST
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MATSUYAMA Eiji
Institute of Applied Physics, 21th Century COE, NANO project, University of Tsukuba
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Tokumoto Hiroshi
Joint Research Center For Atom Technology (jrcat)
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Imayoshi Takahiro
Department Of Applied Physics University Of Tokyo
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Tanigawa Shoichiro
Institute Of Applied Physics University Of Tsukuba
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Nagamura Toshihiko
Unisoku Co. Ltd.
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Nagamura Toshihiko
Unisoku Co.
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Li Yan
Institute Of Applied Physics Crest Japan Science And Technology Corporation (jst) University Of Tsuk
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OZAWA Takehiro
Unisoku Co., Ltd.
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YOSHIZAKI Ryozo
Cryogenics Center, University of Tsukuba
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Hata K
Institute Of Applied Physics Crest University Of Tsukuba
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Lee Jong-lam
Institute Of Materials Science University Of Tsukuba:(present Address)electronics And Telecommunicat
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Kawazu Akira
Institute Of Materials Science And Center For Tara Tsukuba Advanced Research Alliance University Of
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Ozawa Takehiro
Unisoku Co. Ltd.
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Kaikoh Takashi
Institute Of Applied Physics Center For Tara Crest Japan Science And Technology Corporation (jst) Un
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Saiki Koichiro
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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KOMA Atsushi
Faculty of Chemistry, University of Tokyo
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ABE Takeru
Institute of Materials Science and Center for TARA, Tsukuba Advanced Research Alliance, University o
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Koma Atsushi
Department Of Applied Physics University Of Tokyo
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Katayama Mitsuhiro
Institute of Physical and Chemical Research
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Aono Masakazu
Institute of Physical and Chemical Research
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Yoshizaki R
Cryogenics Center University Of Tsukuba
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Yoshizaki Ryozo
Institute Of Appl. Phys. Univ. Of Tsukuba
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Aono Masakazu
Riken (the Institute Of Physical And Chemical Research)
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Aono Masakazu
Institute Of Physical And Chemical Research (riken)
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Aono Masakazu
The Institute Of Physical And Chemical Research (riken):department Of Precision Science And Technolo
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Aono Masakazu
Surface And Interface Laboratory The Institute Of Physical And Chemical Research (riken):erato Aono
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Aono Masakazu
Aono Atomcraft Project Erato Jrdc:riken
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Aono Masakazu
Aono Atomcarft Project Jrdc
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Aono Masakazu
Aono Atomcraft Project : Riken
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Aono Masakazu
Surface And Interface Laboratory Riken:aono Atomcraft Project Research Development Corporation Of Ja
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Aono Masakazu
Riken
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Ando Koji
Department Of Applied Chemistry Muroran Institute Of Technology
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Aono Masakazu
The Institute Of Physical And Chemical Research (riken):department Of Precision Science And Technolo
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Tokumoto Hiroshi
Joint Research Center For Atom Technology National Institute For Advanced Interdisciplinary Research
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Abe Takeru
Institute Of Materials Science And Center For Tara Tsukuba Advanced Research Alliance University Of
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Ando Koji
Department Of Chemistry University Of Tokyo
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Aono Masakazu
The Institute Of Physical And Chemical Research(riken)
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Ando Koji
Department Of Applied Chemistry Faculty Of Science And Technology Keio University
著作論文
- The Effect of Surface Oxides on the Creation of Point Defects in GaAs Studied by Slow Positron Beam
- Si(111) Surface under Phase Transitions Studied by the Analysis of Inner Layer Structures Using Bias-Dependent Scanning Tunneling Microscopy
- Initial Stage of Nitridation of GaAs(001): Atomic Scale View
- Characteristic of the Si(100) Surface Low-Temperature Phase with Two Competing Structures Investigated by Rare Gas Adsorption
- Universal Passivation Effect of (NH_4)_2S_x Treatment on the Surface of III-V Compound Semiconductors
- Epitaxial Growth of Al on (NH_4)_2S_x-Treated GaAs
- AES Observation on the Photochemically Washed Surface of GaAs
- Studies on an (NH_4)_2S_x-Treated GaAs Surface Using AES, LEELS and RHEED
- A Model to Explain the Effective Passivation of the GaAs Surface by (NH_4)_2S_x Treatment : Semiconductors and Semiconductor Devices
- Metal-Dependent Schottky Barrier Height with the (NH_4)_2S_x-Treated GaAs : Semiconductors and Semiconductor Devices
- The Effect of (NH_4)_2S Treatment on the Interface Characteristics of GaAs MIS Structures : Semiconductors and Semiconductors Devices
- Phase Transition between c(4 × 2) and p(2 × 2) Structures of the Si(100) Surface at 6 K Caused by the Fluctuation of Phase Defects on Dimer Rows due to Dimer Flip-Flop Motion
- Surface Structure of InAs (001) Treated with (NH_4)_2S_x Solution