The Effect of (NH_4)_2S Treatment on the Interface Characteristics of GaAs MIS Structures : Semiconductors and Semiconductors Devices
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-07-20
著者
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Fan J‐f
Riken The Institute Of Physical And Chemical Research
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Oigawa Haruhiro
Institute of Materials Science, University of Tsukuba
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Nannichi Yasuo
Institute of Materials Science, University of Tsukuba
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Nannichi Yasuo
University Of Tsukuba
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Nannichi Yasuo
Institute Of Materials Science Institute Of Applied Physics University Of Tsukuba
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Nannichi Yasuo
Institute Of Materials Science And Center For Tara Tsukuba Advanced Research Alliance University Of
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Fan Jia-fa
Institute Of Materials Science University Of Tsukuba:(present Address)insitute Of Physical And Chemi
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Fan Jia-fa
Institute Of Materials Science University Of Tsukuba
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Oigawa H
Institute Of Applied Physics 21th Century Coe Nano Project University Of Tsukuba
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Oigawa Haruhiro
Institute Of Materials Science University Of Tsukuba
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Oigawa Haruhiro
Institute of Applied Physics, 21th Century COE, NANO project, University of Tsukuba, Tsukuba 305-8573, Japan
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