Marked Reduction of the Surface/Interface States of GaAs by (NH_4)_2S_x Treatment
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1989-12-20
著者
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Kurata Yasushi
Institute Of Materials Science University Of Tsukuba
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Fan Jia-fa
Institute Of Materials Science University Of Tsukuba:(present Address)insitute Of Physical And Chemi
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Fan Jia-fa
Institute Of Materials Science University Of Tsukuba
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MANNICHI Yasuo
Institute of Materials Science, University of Tsukuba
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Mannichi Yasuo
Institute Of Materials Science University Of Tsukuba
関連論文
- Selective Etching of AI_2O_3 on GaAs using Excimer Lasers : Etching
- Selective Etching of Al_2O_3 on GaAs using Excimer Lasers
- Low-Temperature Growth of Thin Films of Al_2O_3 by Sequential Surface Chemical Reaction of trimelhylaluminum and H_2O_2
- Universal Passivation Effect of (NH_4)_2S_x Treatment on the Surface of III-V Compound Semiconductors
- Epitaxial Growth of Al on (NH_4)_2S_x-Treated GaAs
- AES Observation on the Photochemically Washed Surface of GaAs
- Studies on an (NH_4)_2S_x-Treated GaAs Surface Using AES, LEELS and RHEED
- A Model to Explain the Effective Passivation of the GaAs Surface by (NH_4)_2S_x Treatment : Semiconductors and Semiconductor Devices
- Metal-Dependent Schottky Barrier Height with the (NH_4)_2S_x-Treated GaAs : Semiconductors and Semiconductor Devices
- The Effect of (NH_4)_2S Treatment on the Interface Characteristics of GaAs MIS Structures : Semiconductors and Semiconductors Devices
- Marked Reduction of the Surface/Interface States of GaAs by (NH_4)_2S_x Treatment