Metal-Dependent Schottky Barrier Height with the (NH_4)_2S_x-Treated GaAs : Semiconductors and Semiconductor Devices
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-11-20
著者
-
Fan J‐f
Riken The Institute Of Physical And Chemical Research
-
Oigawa Haruhiro
Institute of Materials Science, University of Tsukuba
-
Nannichi Yasuo
Institute of Materials Science, University of Tsukuba
-
Nannichi Yasuo
University Of Tsukuba
-
Nannichi Yasuo
Institute Of Materials Science Institute Of Applied Physics University Of Tsukuba
-
Nannichi Yasuo
Institute Of Materials Science And Center For Tara Tsukuba Advanced Research Alliance University Of
-
Fan Jia-fa
Institute Of Materials Science University Of Tsukuba:(present Address)insitute Of Physical And Chemi
-
Fan Jia-fa
Institute Of Materials Science University Of Tsukuba
-
Oigawa H
Institute Of Applied Physics 21th Century Coe Nano Project University Of Tsukuba
-
Oigawa Haruhiro
Institute Of Materials Science University Of Tsukuba
-
Oigawa Haruhiro
Institute of Applied Physics, 21th Century COE, NANO project, University of Tsukuba, Tsukuba 305-8573, Japan
関連論文
- The Effect of Surface Oxides on the Creation of Point Defects in GaAs Studied by Slow Positron Beam
- Si(111) Surface under Phase Transitions Studied by the Analysis of Inner Layer Structures Using Bias-Dependent Scanning Tunneling Microscopy
- Initial Stage of Nitridation of GaAs(001): Atomic Scale View
- Probing subpicosecond dynamics using pulsed laser combined scanning tunneling microscopy
- Characteristic of the Si(100) Surface Low-Temperature Phase with Two Competing Structures Investigated by Rare Gas Adsorption
- Oxidation of Sulfur-Treated GaAs Surfaces Studied by Photoluminescence and Photoelectron Spectroscopy
- Quantitative Analysis of the Wide Range of Concentrations of Boron in Silicon by SIMS
- Selective Etching of AI_2O_3 on GaAs using Excimer Lasers : Etching
- Selective Etching of Al_2O_3 on GaAs using Excimer Lasers
- The Low Temperature Reaction of Radiation Defects in GaAs Introduced by γ-Ray at 33 K
- Low-Temperature Growth of Thin Films of Al_2O_3 by Sequential Surface Chemical Reaction of trimelhylaluminum and H_2O_2
- Universal Passivation Effect of (NH_4)_2S_x Treatment on the Surface of III-V Compound Semiconductors
- Epitaxial Growth of Al on (NH_4)_2S_x-Treated GaAs
- AES Observation on the Photochemically Washed Surface of GaAs
- Studies on an (NH_4)_2S_x-Treated GaAs Surface Using AES, LEELS and RHEED
- A Model to Explain the Effective Passivation of the GaAs Surface by (NH_4)_2S_x Treatment : Semiconductors and Semiconductor Devices
- Metal-Dependent Schottky Barrier Height with the (NH_4)_2S_x-Treated GaAs : Semiconductors and Semiconductor Devices
- The Effect of (NH_4)_2S Treatment on the Interface Characteristics of GaAs MIS Structures : Semiconductors and Semiconductors Devices
- Marked Reduction of the Surface/Interface States of GaAs by (NH_4)_2S_x Treatment
- Pd-on-GaAs Schottky Contact : Its Barrier Height and Response to Hydrogen
- Electron Traps due to Defect-Impurity Complexes Induced by the Deformation of Epitaxial GaAs Grown on Si-Doped Substrate
- Distribution of the Main Electron Trap EL2 in Undoped LEC GaAs
- Comparison of Deep Energy Levels in HB and LEC Undoped Bulk GaAs : LATE NEWS
- Phase Transition between c(4 × 2) and p(2 × 2) Structures of the Si(100) Surface at 6 K Caused by the Fluctuation of Phase Defects on Dimer Rows due to Dimer Flip-Flop Motion
- Relation between Cr-Level and Main Electron Trap (EL2)in Boat-Grown Bulk GaAs
- Surface Structure of InAs (001) Treated with (NH_4)_2S_x Solution
- Analysis of Thermally Stimulated Current Spectroscopy in Semiinsulating GaAs. I. Initialization
- Plasma CVD of Amorphous AlN from Metalorganic Al Source and Properties of the Deposited Films
- Passivation Properties of Plasma CVD AlN Films for GaAs
- Disordering of Si-Doped AlAs/GaAs Superlattice by Annealing
- Photo-Annealing of Fatigue in Photoluminescence of Hydrogenated Amorphous Silicon
- Apparent Recovery Effect of Hydrogenated Pd-on-GaAs (n-Type) Schottky Interface by Forward Current at Low Temperature
- Effects of Carrier Gas and Substrate on the Electrical Properties of Epitaxial GaAs Grown by the Single Flat Temperature Zone Chloride VPE Method
- Chloride VPE of Al_xGa_As by the Hydrogen Reduction Method Using a Metal Al Source : Semiconductors and Semiconductor Devices
- Improved Thermally Stimulated Current Spectroscopy to Characterize Levels in Semi-Insulating GaAs
- A Simple Method to Determine the Capture Cross Section of Deep Levels in GaAs by Thermally Stimulated Current
- Characteristic of the Si(100) Surface Low-Temperature Phase with Two Competing Structures Investigated by Rare Gas Adsorption