Pd-on-GaAs Schottky Contact : Its Barrier Height and Response to Hydrogen

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1991-05-15

著者

• Nannichi Yasuo

  Institute of Materials Science, University of Tsukuba

• Nannichi Yasuo

  Institute Of Materials Science University Of Tsukuba

• Nannichi Yasuo

  Institute Of Materials Science And Center For Tara Tsukuba Advanced Research Alliance University Of

• Nie H‐y

  National Inst. Interdisciplinary Research (nair) Ibaraki Jpn

• NIE Heng-Yong

  Institute of Materials Science, University of Tsukuba

関連論文

• The Effect of Surface Oxides on the Creation of Point Defects in GaAs Studied by Slow Positron Beam
• Quantitative Analysis of the Wide Range of Concentrations of Boron in Silicon by SIMS
• The Low Temperature Reaction of Radiation Defects in GaAs Introduced by γ-Ray at 33 K
• Universal Passivation Effect of (NH_4)_2S_x Treatment on the Surface of III-V Compound Semiconductors
• Epitaxial Growth of Al on (NH_4)_2S_x-Treated GaAs
• AES Observation on the Photochemically Washed Surface of GaAs
• Studies on an (NH_4)_2S_x-Treated GaAs Surface Using AES, LEELS and RHEED
• A Model to Explain the Effective Passivation of the GaAs Surface by (NH_4)_2S_x Treatment : Semiconductors and Semiconductor Devices
• Metal-Dependent Schottky Barrier Height with the (NH_4)_2S_x-Treated GaAs : Semiconductors and Semiconductor Devices
• The Effect of (NH_4)_2S Treatment on the Interface Characteristics of GaAs MIS Structures : Semiconductors and Semiconductors Devices
• Pd-on-GaAs Schottky Contact : Its Barrier Height and Response to Hydrogen
• Electron Traps due to Defect-Impurity Complexes Induced by the Deformation of Epitaxial GaAs Grown on Si-Doped Substrate
• Distribution of the Main Electron Trap EL2 in Undoped LEC GaAs
• Comparison of Deep Energy Levels in HB and LEC Undoped Bulk GaAs : LATE NEWS
• Phase Transition between c(4 × 2) and p(2 × 2) Structures of the Si(100) Surface at 6 K Caused by the Fluctuation of Phase Defects on Dimer Rows due to Dimer Flip-Flop Motion
• Relation between Cr-Level and Main Electron Trap (EL2)in Boat-Grown Bulk GaAs
• Surface Structure of InAs (001) Treated with (NH_4)_2S_x Solution
• Analysis of Thermally Stimulated Current Spectroscopy in Semiinsulating GaAs. I. Initialization
• Plasma CVD of Amorphous AlN from Metalorganic Al Source and Properties of the Deposited Films
• Passivation Properties of Plasma CVD AlN Films for GaAs
• Disordering of Si-Doped AlAs/GaAs Superlattice by Annealing
• Photo-Annealing of Fatigue in Photoluminescence of Hydrogenated Amorphous Silicon
• Apparent Recovery Effect of Hydrogenated Pd-on-GaAs (n-Type) Schottky Interface by Forward Current at Low Temperature
• Effects of Carrier Gas and Substrate on the Electrical Properties of Epitaxial GaAs Grown by the Single Flat Temperature Zone Chloride VPE Method
• Chloride VPE of Al_xGa_As by the Hydrogen Reduction Method Using a Metal Al Source : Semiconductors and Semiconductor Devices
• Improved Thermally Stimulated Current Spectroscopy to Characterize Levels in Semi-Insulating GaAs
• A Simple Method to Determine the Capture Cross Section of Deep Levels in GaAs by Thermally Stimulated Current

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