Electron Traps due to Defect-Impurity Complexes Induced by the Deformation of Epitaxial GaAs Grown on Si-Doped Substrate
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-05-20
著者
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Yamamoto N
Sharp Corp. Nara Jpn
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Onomura Masaaki
Institute Of Materials Science University Of Tsukuba
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HASEGAWA Fumio
Institute of Applied Physics, University of Tsukuba
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Nannichi Yasuo
Institute of Materials Science, University of Tsukuba
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Nannichi Yasuo
University Of Tsukuba
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Nannichi Yasuo
Institute Of Materials Science Institute Of Applied Physics University Of Tsukuba
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Nannichi Yasuo
Institute Of Materials Science And Center For Tara Tsukuba Advanced Research Alliance University Of
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HASEGAWA Fumio
Tohoku University of Art and Design
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Hasegawa Fumio
Institute Of Applied Physics University Of Tsukuba
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YAMAMOTO Norio
Institute of Materials Science, University of Tsukuba
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HASEGAWA Fumio
Institlite of Materials Science, University of Tsukuba
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