The Low Temperature Reaction of Radiation Defects in GaAs Introduced by γ-Ray at 33 K

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1987-07-20

著者

• Nannichi Yasuo

  Institute of Materials Science, University of Tsukuba

• ANDO Koshi

  NTT Electrical Communications Laboratories, Nippon Telegraph and Telephone Corporation

• Nannichi Yasuo

  Institute Of Materials Science And Center For Tara Tsukuba Advanced Research Alliance University Of

• Ando Koshi

  Ntt Electrical Communications Laboratories

• Kamada H

  Ntt Electrical Communications Laboratories

• TOMOZANE Mamoru

  Institute of Materials Science, University of Tsukuba

• KAMADA Hidehiko

  NTT Electrical Communications Laboratories

• Tomozane M

  Motorola Inc. Az Usa

• Tomozane Mamoru

  Institute Of Materials Science University Of Tsukuba

• Tomozane Mamoru

  Institute Of Materials Science University Of Tsukuba:(present Address) Motrola -japan

関連論文

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• Quantitative Analysis of the Wide Range of Concentrations of Boron in Silicon by SIMS
• The Low Temperature Reaction of Radiation Defects in GaAs Introduced by γ-Ray at 33 K
• Universal Passivation Effect of (NH_4)_2S_x Treatment on the Surface of III-V Compound Semiconductors
• Epitaxial Growth of Al on (NH_4)_2S_x-Treated GaAs
• AES Observation on the Photochemically Washed Surface of GaAs
• Studies on an (NH_4)_2S_x-Treated GaAs Surface Using AES, LEELS and RHEED
• A Model to Explain the Effective Passivation of the GaAs Surface by (NH_4)_2S_x Treatment : Semiconductors and Semiconductor Devices
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• Pd-on-GaAs Schottky Contact : Its Barrier Height and Response to Hydrogen
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