Reduction of Threading Dislocations and Oxide Precipitates in SIMOX Material (SOLID STATE DEVICES AND MATERIALS 1)

スポンサーリンク

概要

• 論文の詳細を見る

• A study was carried out to develop methods for reduction of defects in SIMOX (S__-eparation of silicon by <IM>___-plantation of <OM>___-ygen) material. Reduction of threading dislocations was demonstrated by utilizing multiple implant/anneal cycle and by misfit dislocations formed at the interface of Si_>-x>Ge_x/Si heterostructure grown onto SIMOX substrate. The former method can reduce threading dislocations to less than 10^5 cm^<-2> in 0.1 μm silicon on insulator (SOI) and the latter method to 4 × 10^7 cm ^<-2> in 3.1 μm SOI from approximately 10^9 cm ^<-2>. To reduce oxide precipitates, two-step anneal was adopted: hydrogen ambient anneal at 850℃ followed by standard inert ambient anneal at 1250℃. The oxygen bump seen in an oxygen depth profile of superficial silicon layer was almost eliminated. Linewidth of Raman scattering spectra was also improved from 4.45 cm^<-1> by conventional anneal to 4.19 cm^<-1> by this technique.

• 社団法人応用物理学会の論文
• 1989-11-20

著者

• Tomozane M

  Motorola Inc. Az Usa

• Tomozane Mamoru

  Semiconductor Research And Development Laboratory

• Tomozane Mamoru

  Institute Of Materials Science University Of Tsukuba:(present Address) Motrola -japan

• Liaw H.

  Semiconductor Research And Development Laboratory

関連論文

• The Low Temperature Reaction of Radiation Defects in GaAs Introduced by γ-Ray at 33 K
• Analysis of Thermally Stimulated Current Spectroscopy in Semiinsulating GaAs. I. Initialization
• Photo-Annealing of Fatigue in Photoluminescence of Hydrogenated Amorphous Silicon
• Reduction of Threading Dislocations and Oxide Precipitates in SIMOX Material (SOLID STATE DEVICES AND MATERIALS 1)

スポンサーリンク