Tomozane M | Motorola Inc. Az Usa

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概要

• 同名の論文著者
• Motorola Inc. Az Usaの論文著者

関連著者

• Tomozane M

  Motorola Inc. Az Usa

• Tomozane Mamoru

  Institute Of Materials Science University Of Tsukuba:(present Address) Motrola -japan

• Nannichi Yasuo

  Institute of Materials Science, University of Tsukuba

• Nannichi Yasuo

  Institute Of Materials Science And Center For Tara Tsukuba Advanced Research Alliance University Of

• TOMOZANE Mamoru

  Institute of Materials Science, University of Tsukuba

• Tomozane Mamoru

  Institute Of Materials Science University Of Tsukuba

• HASEGAWA Fumio

  Institute of Applied Physics, University of Tsukuba

• Nannichi Yasuo

  University Of Tsukuba

• Nannichi Yasuo

  Institute Of Materials Science Institute Of Applied Physics University Of Tsukuba

• HASEGAWA Fumio

  Tohoku University of Art and Design

• Hasegawa Fumio

  Institute Of Applied Physics University Of Tsukuba

• HASEGAWA Fumio

  Institlite of Materials Science, University of Tsukuba

• Kawabe M

  Nikko Materials Co. Ltd. Saitama Jpn

• Kawabe Mitsuo

  Institute Of Materials Science University Of Tsukuba

• Kawabe Mitsuo

  Institute Of Applied Physics University Of Tsukuba

• ANDO Koshi

  NTT Electrical Communications Laboratories, Nippon Telegraph and Telephone Corporation

• Kawabe M

  Institute Of Applied Physics University Of Tsukuba

• Ando Koshi

  Ntt Electrical Communications Laboratories

• Kamada H

  Ntt Electrical Communications Laboratories

• KAMADA Hidehiko

  NTT Electrical Communications Laboratories

• Tomozane Mamoru

  Semiconductor Research And Development Laboratory

• Liaw H.

  Semiconductor Research And Development Laboratory

• ONODERA Isao

  Institute of Materials Science, University of Tsukuba

• FUKASE Tadashi

  Institute of Materials Science, University of Tsukuba

• Onodera Isao

  Institute Of Materials Science University Of Tsukuba

• Fukase Tadashi

  Institute Of Materials Science University Of Tsukuba

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著作論文

• The Low Temperature Reaction of Radiation Defects in GaAs Introduced by γ-Ray at 33 K
• Analysis of Thermally Stimulated Current Spectroscopy in Semiinsulating GaAs. I. Initialization
• Photo-Annealing of Fatigue in Photoluminescence of Hydrogenated Amorphous Silicon
• Reduction of Threading Dislocations and Oxide Precipitates in SIMOX Material (SOLID STATE DEVICES AND MATERIALS 1)

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