Tomozane Mamoru | Institute Of Materials Science University Of Tsukuba:(present Address) Motrola -japan
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概要
関連著者
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Tomozane M
Motorola Inc. Az Usa
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Tomozane Mamoru
Institute Of Materials Science University Of Tsukuba:(present Address) Motrola -japan
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Nannichi Yasuo
Institute of Materials Science, University of Tsukuba
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Nannichi Yasuo
Institute Of Materials Science And Center For Tara Tsukuba Advanced Research Alliance University Of
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TOMOZANE Mamoru
Institute of Materials Science, University of Tsukuba
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Tomozane Mamoru
Institute Of Materials Science University Of Tsukuba
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HASEGAWA Fumio
Institute of Applied Physics, University of Tsukuba
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Nannichi Yasuo
University Of Tsukuba
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Nannichi Yasuo
Institute Of Materials Science Institute Of Applied Physics University Of Tsukuba
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HASEGAWA Fumio
Tohoku University of Art and Design
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Hasegawa Fumio
Institute Of Applied Physics University Of Tsukuba
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HASEGAWA Fumio
Institlite of Materials Science, University of Tsukuba
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Kawabe M
Nikko Materials Co. Ltd. Saitama Jpn
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Kawabe Mitsuo
Institute Of Materials Science University Of Tsukuba
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Kawabe Mitsuo
Institute Of Applied Physics University Of Tsukuba
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ANDO Koshi
NTT Electrical Communications Laboratories, Nippon Telegraph and Telephone Corporation
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Kawabe M
Institute Of Applied Physics University Of Tsukuba
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Ando Koshi
Ntt Electrical Communications Laboratories
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Kamada H
Ntt Electrical Communications Laboratories
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KAMADA Hidehiko
NTT Electrical Communications Laboratories
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Tomozane Mamoru
Semiconductor Research And Development Laboratory
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Liaw H.
Semiconductor Research And Development Laboratory
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ONODERA Isao
Institute of Materials Science, University of Tsukuba
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FUKASE Tadashi
Institute of Materials Science, University of Tsukuba
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Onodera Isao
Institute Of Materials Science University Of Tsukuba
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Fukase Tadashi
Institute Of Materials Science University Of Tsukuba
著作論文
- The Low Temperature Reaction of Radiation Defects in GaAs Introduced by γ-Ray at 33 K
- Analysis of Thermally Stimulated Current Spectroscopy in Semiinsulating GaAs. I. Initialization
- Photo-Annealing of Fatigue in Photoluminescence of Hydrogenated Amorphous Silicon
- Reduction of Threading Dislocations and Oxide Precipitates in SIMOX Material (SOLID STATE DEVICES AND MATERIALS 1)