ANDO Koshi | NTT Electrical Communications Laboratories, Nippon Telegraph and Telephone Corporation

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概要

• 同名の論文著者
• NTT Electrical Communications Laboratories, Nippon Telegraph and Telephone Corporationの論文著者

関連著者

• ANDO Koshi

  NTT Electrical Communications Laboratories, Nippon Telegraph and Telephone Corporation

• Ando Koshi

  Ntt Electrical Communications Laboratories

• Amano Chikara

  Ntt Electrical Communications Laboratories Nippon Telegraph And Telephone Corporation

• Nannichi Yasuo

  Institute of Materials Science, University of Tsukuba

• SUGIURA Hideo

  NTT Electrical Communications Laboratories, Nippon Telegraph and Telephone Corporation

• YAMAGUCHI Masafumi

  NTT Electrical Communications Laboratories, Nippon Telegraph and Telephone Corporation

• SALETES Anne

  Laboratoire de Physique du Solid et Energie Solaire, C.N.R.S.

• Nannichi Yasuo

  Institute Of Materials Science And Center For Tara Tsukuba Advanced Research Alliance University Of

• Yamaguchi Masafumi

  Ntt Electrical Communications Laboratories

• Saletes A

  Laboratoire De Physique Du Solid Et Energie Solaire C.n.r.s.

• Ando Koshi

  Ntt Electrical Communications Laboratories Nippon Telegraph And Telephone Corporation

• Kamada H

  Ntt Electrical Communications Laboratories

• TOMOZANE Mamoru

  Institute of Materials Science, University of Tsukuba

• KAMADA Hidehiko

  NTT Electrical Communications Laboratories

• Tomozane M

  Motorola Inc. Az Usa

• Tomozane Mamoru

  Institute Of Materials Science University Of Tsukuba

• Tomozane Mamoru

  Institute Of Materials Science University Of Tsukuba:(present Address) Motrola -japan

• Sugiura Hideo

  Ntt Electrical Communications Laboratories

• Sugiura Hideo

  Ntt Electrical Communications Laboratories Nippon Telegraph And Telephone Corporation

• Yamaguchi Masafumi

  Ntt Electrical Communications Laboratories Nippon Telegraph And Telephone Corporation

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著作論文

• Nonradiative e-h Recombination Characteristics of Mid-Gap Electron Trap in Al_xGa_As (X=0.4) Grown by Molecular Beam Epitaxy
• The Low Temperature Reaction of Radiation Defects in GaAs Introduced by γ-Ray at 33 K

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