Chloride VPE of Al_xGa_<1-x>As by the Hydrogen Reduction Method Using a Metal Al Source : Semiconductors and Semiconductor Devices
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概要
- 論文の詳細を見る
VPE of AlGaAs by the chloride transport method using separate Al and Ga metals has been demonstrated for the first time. AsCl_3 instead of toxic AsH_3 was used as the arsenic source. Mirror-like surfaces with growth rates of 1-2μm/hr were obtained. Background doping levels range in the order of 10^<18>cm^<-3>, probably due to the reaction between AlCl_3 and the quartz reactor. Band-edge emissions were observed in the photoluminescence spectra.
- 社団法人応用物理学会の論文
- 1988-02-20
著者
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HASEGAWA Fumio
Institute of Applied Physics, University of Tsukuba
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Nannichi Yasuo
Institute of Materials Science, University of Tsukuba
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KOBAYASHI RYUJI
Institute of Health Sciences, Faculty of Medicine, Hiroshima University
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Kobayashi Ryuji
Institute Of Materials Science University Of Tsukuba
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Nannichi Yasuo
Institute Of Materials Science And Center For Tara Tsukuba Advanced Research Alliance University Of
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HASEGAWA Fumio
Tohoku University of Art and Design
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Takayama Koji
Institute Of Materials Science University Of Tsukuba
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Hasegawa Fumio
Institute Of Applied Physics University Of Tsukuba
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Yamaguchi H
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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Yamaguchi H
Ntt Basic Research Laboratories
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YAMAGUCHI Hiromu
Institute of Materials Science, University of Tsukuba
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Yamaguchi Hiromu
Institute Of Materials Science Universityof Tsukuba
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HASEGAWA Fumio
Institlite of Materials Science, University of Tsukuba
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