A Model to Explain the Effective Passivation of the GaAs Surface by (NH_4)_2S_x Treatment : Semiconductors and Semiconductor Devices

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1988-12-20

著者

• Fan J‐f

  Riken The Institute Of Physical And Chemical Research

• Oigawa Haruhiro

  Institute of Materials Science, University of Tsukuba

• Nannichi Yasuo

  Institute of Materials Science, University of Tsukuba

• Nannichi Yasuo

  University Of Tsukuba

• Nannichi Yasuo

  Institute Of Materials Science Institute Of Applied Physics University Of Tsukuba

• Nannichi Yasuo

  Institute Of Materials Science And Center For Tara Tsukuba Advanced Research Alliance University Of

• Fan Jia-fa

  Institute Of Materials Science University Of Tsukuba:(present Address)insitute Of Physical And Chemi

• Fan Jia-fa

  Institute Of Materials Science University Of Tsukuba

• KOMA Atsushi

  Faculty of Chemistry, University of Tokyo

• Oigawa H

  Institute Of Applied Physics 21th Century Coe Nano Project University Of Tsukuba

• Oigawa Haruhiro

  Institute Of Materials Science University Of Tsukuba

• Oigawa Haruhiro

  Institute of Applied Physics, 21th Century COE, NANO project, University of Tsukuba, Tsukuba 305-8573, Japan

関連論文

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• Initial Stage of Nitridation of GaAs(001): Atomic Scale View
• Probing subpicosecond dynamics using pulsed laser combined scanning tunneling microscopy
• Characteristic of the Si(100) Surface Low-Temperature Phase with Two Competing Structures Investigated by Rare Gas Adsorption
• Oxidation of Sulfur-Treated GaAs Surfaces Studied by Photoluminescence and Photoelectron Spectroscopy
• Quantitative Analysis of the Wide Range of Concentrations of Boron in Silicon by SIMS
• Selective Etching of AI_2O_3 on GaAs using Excimer Lasers : Etching
• Selective Etching of Al_2O_3 on GaAs using Excimer Lasers
• The Low Temperature Reaction of Radiation Defects in GaAs Introduced by γ-Ray at 33 K
• Low-Temperature Growth of Thin Films of Al_2O_3 by Sequential Surface Chemical Reaction of trimelhylaluminum and H_2O_2
• Universal Passivation Effect of (NH_4)_2S_x Treatment on the Surface of III-V Compound Semiconductors
• Epitaxial Growth of Al on (NH_4)_2S_x-Treated GaAs
• AES Observation on the Photochemically Washed Surface of GaAs
• Studies on an (NH_4)_2S_x-Treated GaAs Surface Using AES, LEELS and RHEED
• A Model to Explain the Effective Passivation of the GaAs Surface by (NH_4)_2S_x Treatment : Semiconductors and Semiconductor Devices
• Metal-Dependent Schottky Barrier Height with the (NH_4)_2S_x-Treated GaAs : Semiconductors and Semiconductor Devices
• The Effect of (NH_4)_2S Treatment on the Interface Characteristics of GaAs MIS Structures : Semiconductors and Semiconductors Devices
• Marked Reduction of the Surface/Interface States of GaAs by (NH_4)_2S_x Treatment
• Pd-on-GaAs Schottky Contact : Its Barrier Height and Response to Hydrogen
• Electron Traps due to Defect-Impurity Complexes Induced by the Deformation of Epitaxial GaAs Grown on Si-Doped Substrate
• Distribution of the Main Electron Trap EL2 in Undoped LEC GaAs
• Comparison of Deep Energy Levels in HB and LEC Undoped Bulk GaAs : LATE NEWS
• Phase Transition between c(4 × 2) and p(2 × 2) Structures of the Si(100) Surface at 6 K Caused by the Fluctuation of Phase Defects on Dimer Rows due to Dimer Flip-Flop Motion
• Relation between Cr-Level and Main Electron Trap (EL2)in Boat-Grown Bulk GaAs
• Surface Structure of InAs (001) Treated with (NH_4)_2S_x Solution
• Analysis of Thermally Stimulated Current Spectroscopy in Semiinsulating GaAs. I. Initialization
• Plasma CVD of Amorphous AlN from Metalorganic Al Source and Properties of the Deposited Films
• Passivation Properties of Plasma CVD AlN Films for GaAs
• Disordering of Si-Doped AlAs/GaAs Superlattice by Annealing
• Photo-Annealing of Fatigue in Photoluminescence of Hydrogenated Amorphous Silicon
• Apparent Recovery Effect of Hydrogenated Pd-on-GaAs (n-Type) Schottky Interface by Forward Current at Low Temperature
• Effects of Carrier Gas and Substrate on the Electrical Properties of Epitaxial GaAs Grown by the Single Flat Temperature Zone Chloride VPE Method
• Chloride VPE of Al_xGa_As by the Hydrogen Reduction Method Using a Metal Al Source : Semiconductors and Semiconductor Devices
• Improved Thermally Stimulated Current Spectroscopy to Characterize Levels in Semi-Insulating GaAs
• A Simple Method to Determine the Capture Cross Section of Deep Levels in GaAs by Thermally Stimulated Current
• Characteristic of the Si(100) Surface Low-Temperature Phase with Two Competing Structures Investigated by Rare Gas Adsorption

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