Characteristic of the Si(100) Surface Low-Temperature Phase with Two Competing Structures Investigated by Rare Gas Adsorption
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概要
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The change of the Si(100) surface, exposed to Kr gas at 10 K with the scanning tunneling microscopy (STM) tip being extracted, was observed by STM. For a n-type sample, a p($2 \times 2$)/c($4 \times 2$) coexisting structure was stably observed even at low Kr coverage, and the amount of the c($4 \times 2$) area increased with increasing the coverage. These results clearly show the appearance of the p($2 \times 2$) phase at 10 K. The Kr growth process was observed by low-energy electron diffraction measurement for both n- and p-type samples, suggesting the influence of the STM measurement on the c($4 \times 2$) structure observed for the p-type sample at 10 K.
- Japan Society of Applied Physicsの論文
- 2004-07-15
著者
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Kimura Tomohiko
Institute of Applied Physics and CREST, Japan Science Technology Cooperation, University of Tsukuba
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Takeuchi Osamu
Institute Of Applied Physics And 21st Coe University Of Tsukuba
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Shigekawa Hidemi
Institute Of Applied Physics And 21st Coe University Of Tsukuba
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Matsuyama Eiji
Institute Of Applied Physics 21th Century Coe Nano Project University Of Tsukuba
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Yoshida Shoji
Institute Of Applied Physics Crest University Of Tsukuba
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Yoshida Shoji
Institute of Applied Physics, 21th Century COE, NANO project, University of Tsukuba, Tsukuba 305-8573, Japan
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Oigawa Haruhiro
Institute of Applied Physics, 21th Century COE, NANO project, University of Tsukuba, Tsukuba 305-8573, Japan
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Kimura Tomohiko
Institute of Applied Physics, 21th Century COE, NANO project, University of Tsukuba, Tsukuba 305-8573, Japan
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Matsuyama Eiji
Institute of Applied Physics, 21th Century COE, NANO project, University of Tsukuba, Tsukuba 305-8573, Japan
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