Electronic Structure of the Si(100) Surface A Defects Analyzed by Scanning Tunneling Spectroscopy at 80 K

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-06-30

著者

• 森田 隆二

  北海道大学大学院工学研究科応用物理学専攻

• 重川 秀実

  筑波大学物理工学系

• YAMASHITA Mikio

  Department of Applied Physics, Hokkaido University

• Sainoo Y

  Univ. Tsukuba Tsukuba Jpn

• Sainoo Yasuyuki

  Institute Of Multidisciplinary Research For Advanced Materials (imram) Tohoku University

• SHIGEKAWA Hidemi

  Institute of Applied Physics, University of Tsukuba

• 重川 秀実

  Univ. Tsukuba Tsukuba

• Shigekawa Hidemi

  Institute Of Applied Physics University Of Tsukuba

• Shigekawa Hidemi

  Institute Of Applied Physics And Crest Japan Science And Technology Corporation (jst) University Of

• 森田 隆二

  北大 大学院工学研究科

• Kimura Tomohiko

  Institute of Applied Physics and CREST, Japan Science Technology Cooperation, University of Tsukuba

• Morita Ryuji

  Institute of Applied Physics and CREST, Japan Scinence Technology Cooperation, University of Tsukuba

• Hata Kenji

  Institute of Applied Physics and CREST, Japan Science Technology Cooperation, University of Tsukuba

• Sainoo Yasuyuki

  Institute Of Applied Physics And Crest Japan Science And Technology Corporation (jst) University Of

• Yamashita Mikio

  Department Of Applied Physics Hokkaido University

• Kimura T

  Photonics Research Institute National Institute Of Advanced Industrial Science And Technology

• Hata K

  Institute Of Applied Physics Crest University Of Tsukuba

• Shigekawa Hidemi

  Institute Of Applied Physics And 21st Coe University Of Tsukuba

• Morita Ryuji

  Department Of Applied Physics Faculty Of Engineering University Of Tokyo

• Kimura T

  Institute Of Applied Physics 21th Century Coe Nano Project University Of Tsukuba

• Kimura Tatsumi

  Photonics Research Institute National Institute Of Advanced Industrial Science And Technology

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