Origin, Cause, and Electronic Structure of the Symmetric Dimers of Si(100) at 80 K
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-06-30
著者
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重川 秀実
筑波大学物理工学系
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Takeuchi O
大阪大学免疫学フロンティア研究センター 自然免疫学
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SHIGEKAWA Hidemi
Institute of Applied Physics, University of Tsukuba
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重川 秀実
Univ. Tsukuba Tsukuba
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Shigekawa Hidemi
Institute Of Applied Physics University Of Tsukuba
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Shigekawa Hidemi
Institute Of Applied Physics And Crest Japan Science And Technology Corporation (jst) University Of
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Takeuchi Osamu
Institute Of Applied Physics University Of Tsukuba
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Tokumaru Katsumi
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology
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Takeuchi O
Institute Of Applied Physics University Of Tsukuba
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Kimura Tomohiko
Institute of Applied Physics and CREST, Japan Science Technology Cooperation, University of Tsukuba
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Hata Kenji
Institute of Applied Physics and CREST, Japan Science Technology Cooperation, University of Tsukuba
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Takeuchi Osamu
Institute Of Applied Physics And 21st Coe University Of Tsukuba
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Hata K
Institute Of Applied Physics Crest University Of Tsukuba
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Shigekawa Hidemi
Institute Of Applied Physics And 21st Coe University Of Tsukuba
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Kimura T
Institute Of Applied Physics 21th Century Coe Nano Project University Of Tsukuba
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