Hydrogen as the Cause of Step Bunching Formed on Vicinal GaAs(001)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-07-30
著者
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SHIGEKAWA Hidemi
Institute of Applied Physics, University of Tsukuba
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Okano Tatsuo
Institute of Industrial Science, The University of Tokyo
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Hata Kenji
Institute of Applied Physics and CREST, Japan Science Technology Cooperation, University of Tsukuba
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Akiyama Masahiro
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Ueda T
Nuclear Engineering Research Laboratory University Of Tokyo
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Shigekawa Hidemi
Institute Of Applied Physics Crest Japan Science And Technology Corporation University Of Tsukuba
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Shigekawa Hidemi
Institute Of Applied Physics And 21st Coe University Of Tsukuba
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UEDA Takashi
Oki Semiconductor Technology Laboratory, Co.Ltd.
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AKIYAMA Masahiro
Oki Semiconductor Technology Laboratory, Co.Ltd.
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Okano Tatsuo
Institute Of Industrial Science The University Of Tokyo
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Akiyama M
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Hata Kenji
Institute Of Applied Physics Crest Japan Science And Technology Corporation University Of Tsukuba
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Ueda Takashi
Oki Semiconductor Technology Laboratory Co.ltd.
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