Multiplication Characteristics of a-Si:H p-i-n Photodiode Film in High Electric Field
スポンサーリンク
概要
- 論文の詳細を見る
a-Si:H photodiode film is suitable for photoconversion in stacked-type image sensors. If a photocurrent in an a-Si:H p-i-n photodiode film is multiplied by the avalanche phenomenon, a highly sensitive image sensor can be realized. A photocurrent multiplication phenomenon was observed in a p-type hydrogenated amorphous silicon carbide (a-SiC:H)/i-type hydrogenated amorphous silicon (a-Si:H)/n-type crystalline silicon (c-Si) heterojunction p-i-n photodiode film that was fabricated on an n-type silicon substrate using a plasma-enhanced chemical vapor deposition (PECVD) system. The photocurrent multiplication characteristics were varied by the temperature and deposition conditions of the films. The temperature was dependent on the ionization rate which indicates an avalanche multiplication mechanism. The variation of deposition conditions characteristics changed the multiplication rate of the films due to the change of residual stress. It indicates that the multiplication rate decreases with the presence of residual compressive stress in the films.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-15
著者
-
Akiyama Masahiro
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
-
Ishida Makoto
Department Of Applied Chemistry & Biochemistry Faculty Of Engineering Kumamoto University
-
Hanada Masaki
Department Of Applied Physics Nagoya University
-
Sawada Kazuaki
Department of Electric and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan
-
Akiyama Masahiro
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan
-
Sawada Kazuaki
Department of Electric and Electronic Engineering, Toyohashi University of Technology
関連論文
- Conduction Anisotropy of the Halogen-Bridged Metal Complex Pt_2(n-butyICS_2)_4I(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Low-Noise Fully Differential Amplifiers Using JFET-CMOS Integration Technology for Smart Sensors
- Neo-Transmitter Using Pulse Width Modulation (PWM) Method for Wireless Smart Sensors
- PJ-416 Significance of Pulmonary Artery Potential as a Marker for the Ablation of Premature Ventricular Contractions Originating from the Pulmonary Artery(PJ070,Ventricular Arrhythmia (Clinical/Diagnosis/Treatment) 1 (A),Poster Session (Japanese),The 73rd
- Strong Mechanoluminescence from UV-Irradiated Spinels of ZnGa_2O_4 : Mn and MgGa_2O_4:Mn
- Traumatic mesenteric bleeding managed solely with transcatheter embolization
- Field Electron Emission from Silicon Nanoprotrusions : Surfaces, Interfaces, and Films
- Improvement of Metal-Oxide Semiconductor Interface Characteristics in Complementary Metal-Oxide Semiconductor on Si(111) by Combination of Fluorine Implantation and Long-Time Hydrogen Annealing
- Fabrication of JFET device on Si (111) for sensor interface array circuit
- Signal Conditioning CMOS Circuits Integrated on Si (111) for Image-Recording Sensor of Neural Activity
- Diastolic Potentials Recorded during Sinus Rhythm along the Mitral Annulus of Normal Hearts(Arrhythmia, Diagnosis/Pathophysiology/EPS 7 (A), The 69th Annual Scientific Meeting of the Japanese Circulation Society)
- Development of Radio Frequency Transmitters Including On-chip Antenna for Intelligent Human Sensing Systems
- Prognostic Factors and Proliferative Activities in Breast Cancer. A Comparative Study between Recurrent and Non-Recurrent Cases of Human Breast Carcinomas
- Hydrogen as the Cause of Step Bunching Formed on Vicinal GaAs(001)
- Excess Noise Characteristics of Hydrogenated Amorphous Silicon p-i-n Photodiode Films
- Excess Noise Characteristics of a-Si:H p-i-n Photodiode Films
- Recovery Phenomenon of mechanoluminescence from Ca2Al2SiO7: Ce by irradiation with ultraviolet light
- Excess Noise Characteristics of Hydrogenated Amorphous Silicon Avalanche Photodiode Films Using Functionally Graded Structure
- Excess Noise Characteristics of a-Si:H Avalanche Photodiode Films Using Functionally Graded Structure
- Kinetics of the Subtransition of Multilamellar Dipalmitoylphosphatidylcholine
- Highly sensitive quantification of vancomycin in plasma samples using liquid chromatography-tandem mass spectrometry and oral bioavailability in rats
- Realization of n-type and p-type Si-Microprobe Array Using In-Situ Doping with Selective Vapor-Liquid-Solid (VLS) Growth Method
- Highly Syn π-Facial Preference in the Diels - Alder Reactions of 1,2,3,4,5-Pentamethylcyclopentadienes Having Carboxy, Ethoxycarbonyl, and Cyano Substituents at 5-Positions
- Characterization of SOS Films Grown with Amorphous Si Buffer Layers by MOS FET's
- Evaluation of Diabetic Nephropathy by Doppler Color Flow Imaging
- A Fused pH and Fluorescence Sensor Using the Same Sensing Area
- Compact Electrochemical System Using On-Chip Sensor Electrodes and Integrated Devices
- Charge Accumulation Type Hydrogen Ion Image Sensor with High pH Resolution
- Properties and Mechanism of Si Selective Epitaxial Growth on Al_2O_3 using Electrom Beam Irradiation
- Double SOI Structures and Device Applications with Heteroepitaxial Al_2O_3 and Si
- Multichannel 5 × 5-Site 3-Dimensional Si Microprobe Electrode Array for Neural Activity Recording System
- Focal Pseudo-Atrial Fibrillation after Radiofrequency Ablation of Focal Atrial Tachycardia
- Effects of the π and π^* Orbitals of the 5-Unsaturated Substituents on the π-Facial Selectivities in the Diels-Alder Reactions of Cyclopentadienes
- Multilayered Volumetric Composite Right/Left Handed Metamaterial Structures Composed of Dielectric Resonators and Parallel Mesh Plates
- Epitaxial Si on Al_2O_3 Films Grown with O_2 Gas by the Ultrahigh-Vacuum Chemical Vapor Deposition Method
- The Effect of Oxidation Source Gas on Epitaxial Al_2O_3 Films on Si
- Epitaxial Si on Al_2O_3 Films Grown with O_2 Gas by UHV-CVD Method
- Novel Pressure Sensors Using Epitaxially Stacked Si/Al_2O_3/Si Structures for High-Precision Thickness Control of Silicon Diaphragms
- Reductive Degradation of a[2Fe-2S] Cluster of Chlorella Ferredoxin Studied by Circular Dichroism Spectroscopy
- Formation of Very Thin Epitaxial Al_2O_3 Pre-layer with Very Smooth Surface on Si (111) Using a Protective Oxide Layer
- Formation of Very Thin Epitaxial Al_2O_3 Pre-Layer with Very Smooth Surface on Si(111) Using Protective Oxide Layer
- Fabrication of the Si/Al_2O_3/SiO_2/Si Structure Using O_2 Annealed Al_2O_3/Si Structure
- Fabrication of the Si/Al_2O_3/SiO_2/Si Structure by Using the O_2 Annealed Al_2O_3/Si Structure
- Real-Time Two-Dimensional Imaging of Potassium Ion Distribution Using an Ion Semiconductor Sensor with Charged Coupled Device Technology
- Fabrication and Electrical Characterization of Ultrathin Crystalline Al_2O_3 Gate Dielectric Films on Si(100) and Si(111) by Molecular Beam Epitaxy : Electrical Properties of Condensed Matter
- Fabrication of Resonance Tunnel Diode by γ-Al_2O_3/Si Multiple Heterostructures
- Three Dimensional Polysilicon Type Accelerometer Using Poly-Si/SiOX_n/Si/SiOX_n/Si Structure
- Experimental Study of Fetal Liver Transplantation
- Epitaxial Growth of CdTe by a Close-Spaced Technique
- Effect of Oxygen Radicals for Epitaxial Growth of Al_2O_3 on Si
- On the genus field of an algebraic number field of odd prime degree
- Study of a Wireless Multimodal Sensing System Integrated with an Electrical Conductivity Sensor and a Temperature Sensor for the Health Control of Cows
- Development of Surface Morphology of Epitaxial Al_2O_3 on Silicon by Controlling Reaction between Oxygen and Silicon Surface
- Difference of Si Selective Growth on Al_2O_3 and SiO_2 Substrates by Electron Beam Irradiation Method
- Fabrication of Si/Al2O3/Si Silicon on Insulator Structures Grown by Ultrahigh-Vacuum CVD Method
- Preparation of PLZT Thin Films by RF Sputtering
- Back-Irradiation Type Photo-Detector Arrays Using Field Emitter Deviece(Recent Progress in Photon Detection Technology)
- Fabrication of Thermoelectric Sensor Using Silicon-on-Insulator Structure
- Miniaturization of Electrical Conductivity Sensors for a Multimodal Smart Microchip
- A Wide Dynamic Range Photogate-Type Active Pixel Sensor Using a Self-Regulation Principle
- Smart Microfluidic Electrochemical DNA Sensors with Signal Processing Circuits
- Characteristics of Highly Sensitive pH Sensors with Charge Accumulation Operation
- Realization of In Situ Doped n-Type and p-Type Si-Microprobe Array by Selective Vapor-Liquid-Solid (VLS) Growth Method
- Rickets in Infancy and Childhood
- Characteristics of Metal–Oxide–Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
- Fabrication of Crystalline HfO2 High-$\kappa$ Dielectric Films Deposited on Crystalline $\gamma$-Al2O3 Films
- Call Admission Control on Single Node Networks under Output Rate-Controlled Generalized Processor Sharing (ORC-GPS) Scheduler
- Label-Free Acetylcholine Image Sensor Based on Charge Transfer Technology for Biological Phenomenon Tracking
- Intelligent Ultraviolet Sensor Composed of GaN-Based Photodiode and N-Channel Metal Oxide Semiconductor Si-Charge Transfer Type Signal Processor
- Multichannel $5 \times 5$-Site 3-Dimensional Si Microprobe Electrode Array for Neural Activity Recording System
- Effect of Annealing on Physical and Electrical Properties of Ultrathin Crystalline $\gamma$-Al2O3 High-$k$ Dielectric Deposited on Si Substrates
- Progressive-Type Fused pH and Optical Image Sensor
- Development of Cavity Structure for Field Emission on Si Substrate
- Multiplication Characteristics of a-Si:H p-i-n Photodiode Film in High Electric Field
- Current–Voltage Characteristics of $\gamma$-Al2O3/epi-Si Resonant Tunneling Diodes with Different Quantum Well Thicknesses
- The Characteristic Improvement of Si (111) Metal–Oxide–Semiconductor Field-Effect Transistor by Long-Time Hydrogen Annealing
- Multiwavelength Photosensor for On-Chip Real-Time Monitoring of Fluorescence and Turbidity
- Electrical Characteristics of Epitaxial $\gamma$-Al2O3/Si for Quantum Tunneling Device
- Integrated Square Wave Voltammetry Redox Sensor System for Electrochemical Analysis
- Electron Emission Characteristic from Pb(Zr,Ti)O3 Thin Plate by Infrared Light Irradiation
- BS-7-13 Asymmetric RTS/CTS for Exposed Node Reduction in IEEE 802.11 Ad Hoc Network
- On congruence L-series:Dedicated to Professor Z. Suetuna on his 60th birthday
- On the variety of orbits with respect to an algebraic group of birational transformations