Reduction of Stress in GaAs with In-Doped GaAs Intermediate Layer Grown on Si Substrate by Metalorganic Chemical Vapor Deposition

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概要

• 論文の詳細を見る

• This paper is the first report on the In doping effect to control the stress in the GaAs layer on a Si substrate. The wafer bending of InGaAs on Si decreases as the In concentration increases. The wafer bending linearly changes with the growth temperature, in contrast to undoped GaAs on Si in which the wafer bending is not changed with the growth temperature. By inserting the In-doped layer as an intermediate layer between GaAs and the Si substrate, the stress and dislocation in the upper undoped GaAs layer are reduced. These results show the possibility of controlling the stress and the dislocation in the GaAs layer on Si.

• 社団法人応用物理学会の論文
• 1992-12-15

著者

• Akiyama M

  Kyushu National Industrial Research Institute Agency Of Industrial Science And Technology Ministry O

• Akiyama Masahiro

  Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.

• Yamagishi Chitake

  Central Research Laboratory Nihon Cement Co. Lid.

• Ueda T

  Nuclear Engineering Research Laboratory University Of Tokyo

• ONOZAWA Sachiko

  Research and Development Group, Oki Electric Industry Co., Ltd.,

• YAMAGISHI Chouho

  Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.

• UEDA Takashi

  Semiconductor Technology Laboratory, Research & Development Group, Oki Electric Industry Co., Ltd.

• YAMAICHI Eiji

  Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.

• ONOZAWA Sachiko

  Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.,

• Yamaichi E

  Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.

• Yamagishi Chouho

  Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.

• Onozawa Sachiko

  Research And Development Group Oki Electric Industry Co. Ltd.

• Ueda Takashi

  Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.

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