Photoluminescence in KTaO_3 Single Crystal
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概要
- 論文の詳細を見る
The photoluminescence was observed in undoped KTaO. single crystal under the il-lurnination of the band-gap light at low temperatures. The emission spectrum at 49 Kshows an asymmetric broad band peaked at 2.6 eV. It can fit in with superimposedtwo Gaussian curves peaked at 2.61 eV and 2.28 eV. As the temperature increases, theintensity of the 2.61 eV emission band decreases steeply. The emission spectrum at 83K can be fit in with one Gaussian curve peaked at 2. 1 eV. The decay of the photoluminescence was measured using a N. pulse Baser. The decay kinetics of the 2.61 eV emis-sion band can be explained by the theory of the recombination of electrons trappedon donors and holes trapped on acceptors. The temperature dependence of theluminescence can be explained by thermal ionization of holes on acceptors in parallelwith the donor-acceptor recombination.
- 社団法人日本物理学会の論文
- 1987-05-15
著者
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Ohi Kikuo
Department of Physics, School of Science and Engineering, Waseda University
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Ohi K
Waseda Univ. Jpn
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Ohi Kikuo
Department Of Physics Ochanomizu University
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Watanabe Kazuto
Safety Assessment Department Chugai Pharmaceutical Co. Ltd.
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WATANABE Koichi
Department of Mechanical Engineering, Keio University
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YAMAICHI Eiji
Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.
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Yamaichi E
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
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Yamaichi Eiji
Department Of Physics School Of Science And Engineering Waseda University
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IMAMIYA Koji
Department of Physics,School of Science and Engineering,Waseda University
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Imamiya Koji
Department Of Physics School Of Science And Engineering Waseda University
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Watanabe Koichi
Department Of Mechanical Engineering Faculty Of Engineering Keio University.
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Watanabe Koichi
Department Of Materials Chemistry Faculty Of Engineering Gunma University
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WATANABE Koichi
Department of Integrated Biosciences, Graduate School of Frontier Sciences, The University of Tokyo:CREST, Japan Science and Technology Agency(JST)
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