A New Insulated-Gate Inverted-Structure Modulation-Doped AlGaAs/GaAs/N-AlGaAs Field-Effect Transistor
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1984-11-20
著者
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Komano H
Tokyo Ohka Kogyo Co. Ltd. Kanagawa Jpn
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Akiyama M
Kyushu National Industrial Research Institute Agency Of Industrial Science And Technology Ministry O
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Nishi S
Oki Electric Ind. Co. Ltd. Yokosuka‐shi Jpn
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Nishi Seiji
Research Laboratory Oki Electric Industry Co. Ltd.
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Ishida Toshimasa
Research Laboratory Oki Electric Industry Co. Lid
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Ishida Takayuki
Department Of Radiology National Federation Of Health Insurance Societies Osaka Chuo Hospital
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Akiyama Masahiro
Research Laboratory Oki Electric Industry Co. Ltd.
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Akiyama Masahiro
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
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Akiyama Masahiro
Research And Development Group Oki Electric Industry Co. Ltd.
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Sano Y
Division Of Precision Science And Technology And Applied Physics Graduate School Of Engineering Osak
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Sano Yoshiaki
Research And Development Group Oki Electric Industry Co. Lid.
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KAMINISHI Katsuzo
Research Laboratory, Oki Electric Industry Co., Ltd.
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KINOSHITA Haruhisa
Research Laboratory, OKI Electric Industry Co., Ltd.
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Kinoshita H
Laboratory Of Advanced Science And Technology For Industry University Of Hyogo
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Kinoshita Haruhisa
Research Institute Of Electronics Shizuoka University
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Kaminishi Katsuzo
Research Laboratory Oki Electric Industry Co. Ltd.
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Kaminishi K
Miyazaki Univ. Miyazaki‐shi Jpn
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NISHI Seiji
Department of Physics, Osaka University
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