Pulsed Supermagnetron Plasma Chemical Vapor Deposition of Hydrogenated Amorphous Carbon Nitride Films
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概要
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Pulsed supermagnetron plasma was applied to the deposition of hydrogenated amorphous carbon nitride (a-CNx:H) films. The range of upper/lower electrode rf powers (UPRF/LORF) was selected as 0–800/0–800 W, and films were deposited using i-C4H10/N2 plasma. Phase-controlled rf power (13.56 MHz) was modulated by a 2.5 kHz pulse frequency. The range of duty ratios for the pulsed rf power range was selected as 12.5–100%. With a decrease in duty ratio, the wafer temperature decreased as the pulsed plasma-discharge time decreased. The optical band gap decreased slightly with an increase in duty ratio. At a duty ratio of 12.5%, the optical band gap decreased significantly with an increase in LORF. The nitrogen atom concentrations of the films were less than 9%, and hard a-CNx:H films of approximately 35 GPa were obtained at a LORF of 50 W, independent of UPRF.
- 2010-08-25
著者
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Kinoshita Haruhisa
Research Institute Of Electronics Shizuoka University
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Yamaguchi Atsushi
Research And Development Headquarters Rohm Co. Ltd.
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Yamaguchi Atsushi
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
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Kinoshita Haruhisa
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
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