Recrystallization of Ge on SiO_2 Using SrF_2 Seed by Pseudo-Line Electron Beam Annealing

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Tetragonal Lattice Distortion and Tensile Stress in GaAs Layers Grown on Si Substrates by MOCVD
Misfit and Threading Dislocations in GaAs Layers Grown on Si Substrates by MOCVD
Characterization of Lattice Defect Structures at GaAs/Si Interface by Transmission Electron Microscopy
Dependence of Magnetic Shielding Property on Critical Current Density
Magnetic Shielding Propertiy of Bi(Pb)-Sr-Ca-Cu-O Superconducting Tube
A Study of GaAs Digital ICs on Si Substrates
Influence of Annealing Method on Microscopic One-to-One Correlation between Threshold Voltage of GaAs MESFET and Dislocation
The Dependence of Threshold Voltage Scattering of GaAs MESFET on Annealing Method
A New Insulated-Gate Inverted-Structure Modulation-Doped AlGaAs/GaAs/N-AlGaAs Field-Effect Transistor
Improved Threshold Voltage Uniformity in GaAs MESFET Using High Purity MOCVD-Grown Buffer Layer as a Substrate for Ion Implantation
Persistent Channel Depletion Caused by Hot Electron Trapping Effect in Selectively Doped n-AlGaAs/GaAs Structures
Magnetic Detector Using Bi-Pb-Sr-Ca-Cu-O Superconductive Film
Preparation of the High-T_c Superconductive Bi-Pb-Sr-Ca-Cu-O Film by Pyrolysis of Organic Acid Salts
Recrystallization of Ge on SiO_2 Using SrF_2 Seed by Pseudo-Line Electron Beam Annealing
A Decision Circuit with Phase Detectors for 1O-Gb/s Optical Communication Systems (Special Issue on Ultra-High-Speed LSIs)
Improved Transconductance of AlGaAs/GaAs Heterostructure FET with Si-Doped Channel
Fabrication of GaAs MESFET Ring Oscillator on MOCVD Grown GaAs/Si(100) Substrate
Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD
Effects of the Substrate Offset Angle on the Growth of GaAs on Si Substrate
High-Speed Low-Power Ring Oscillator Using Inverted-Structure Modulation-Doped GaAs/n-AlGaAs Field-Effect Transistors
Growth of Single Domain GaAs on 2-inch Si(100) Substrate by Molecular Beam Epitaxy
Method to Obtain Low-Dislocation-Density Regions by Patterning with SiO_2 on GaAs/Si Followed by Annealing
Reduction of Stress in GaAs with In-Doped GaAs Intermediate Layer Grown on Si Substrate by Metalorganic Chemical Vapor Deposition

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