The Dependence of Threshold Voltage Scattering of GaAs MESFET on Annealing Method
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-01-20
著者
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NAKAMURA Hiroshi
Research Center for Advanced Science and Technology, the University of Tokyo
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EGAWA Takashi
Research center for Nano-Device and System, Nagoya Institute of Technology
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Egawa Takashi
Research Center For Nano-device And System Nagoya Institute Of Technology
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Egawa Takashi
Research Laboratory Oki Electric Industry Co. Ltd.
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Ishida Toshimasa
Research Laboratory Oki Electric Industry Co. Lid
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Ishida Takayuki
Department Of Radiology National Federation Of Health Insurance Societies Osaka Chuo Hospital
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Sano Y
Division Of Precision Science And Technology And Applied Physics Graduate School Of Engineering Osak
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Sano Yoshiaki
Research And Development Group Oki Electric Industry Co. Lid.
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KAMINISHI Katsuzo
Research Laboratory, Oki Electric Industry Co., Ltd.
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Kaminishi Katsuzo
Research Laboratory Oki Electric Industry Co. Ltd.
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Kaminishi K
Miyazaki Univ. Miyazaki‐shi Jpn
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Nakamura Hiroshi
Research And Development Division Technical Research Loborotory Kawasaki Dockyard Co. Ltd.
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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