Egawa Takashi | Research Center For Nano-device And System Nagoya Institute Of Technology
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概要
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関連著者
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Egawa Takashi
Research Center For Nano-device And System Nagoya Institute Of Technology
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EGAWA Takashi
Research center for Nano-Device and System, Nagoya Institute of Technology
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Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Umeno M
Department Of Electronic Engineering Chubu University
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Umeno Masataka
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Ishikawa Hiroyasu
Research And Development Laboratories Kokusai Denshin Denwa Co. Ltd.
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Umeno M
Nagoya Inst. Technology
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Ishikawa H
Research Center For Nano-device And System Nagoya Institute Of Technology
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Umeno M
Department Of Management And Information Science Faculty Of Engineering Fukui University Of Technolo
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ISHIKAWA Hiroyasu
Research Center for Nano-Device and System, Nagaya Institute of Technology
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JIMBO Takashi
Research Center for Micro-Structure Device, Nagoya Institute of Technology
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Nishikawa H
Osaka Univ. Osaka Jpn
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UMENO Masayoshi
Department of electrical and Computer Engineering, Nagoya Institute of Technology
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Jimbo T
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
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Jimbo Takashi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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JIMBO Takashi
Department of Environmental Technology & Urban Planning, Nagoya Institute of Technology
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Umeno Masayoshi
Department Of Electronic Mechanical Engineering Nagoya University
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Umeno M
Fukui Univ. Technol. Fukui Jpn
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Umeno Masataka
Graduate School Of Engineering Osaka University
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Umeno Masayoshi
Department Of Electronic And Computer Engineering Nagoya Institute Of Technology
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Ishikawa H
Kddi R&d Laboratories Inc.
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Jimbo T
Research Center For Nano-device And System Nagoya Institute Of Technology
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Jimbo Takashi
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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UMENO Masayoshi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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Umeno Masayoshi
Department Of Electronic Engineering Chubu University
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Jimbo T
Nagoya Inst. Technology Nagoya Jpn
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Zhao Guang-yuan
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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趙 廣元
名古屋工業大学・ベンチャー・ビジネス・ラボラトリー
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NAKADA Naoyuki
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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Nakada N
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Miyoshi Makoto
Corporate R&d Ngk Insulators Ltd.
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Egawa Takashi
Research Laboratory Oki Electric Industry Co. Ltd.
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Nakamura K
Department Of Electrical Engineering School Of Engineering Nagoya University
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Arulkumaran Subramaniam
Research Center For Nano-device And System Nagoya Institute Of Technology
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Hasegawa Y
Asahi Technical Lab. Co. Shizuoka Jpn
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Hasegawa Yoshiaki
Department Of Periodontology School Of Dentistry Aichi-gakuin University
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NAKAMURA Kouichi
Department of Morphological Brain Science, Graduate School of Medicine, Kyoto University
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ARULKUMARAN Subramaniam
Research Center for Nano-Device and System, Nagoya Institute of Technology
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Ishikawa Hiroyasu
Department of Internal Medicine, Anjo Kosei Hospital
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Jiang Hao
Research Center For Nano-device And System Nagoya Institute Of Technology
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Jiang H
Research Center For Nano-device And System Nagoya Institute Of Technology
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Zhang Baijun
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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Ishikawa Hiroyasu
Nagoya Inst. Of Technol. Nagoya Jpn
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Ishikawa Hiroyasu
Department Of Circulation And Respiration The Resrach Institute Of Environmental Medicine Nagoya Uni
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Nakamura Kouichi
Department Of Morphological Brain Science Graduate School Of Medicine Kyoto University:core Research
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NAKAMURA Hiroshi
Research Center for Advanced Science and Technology, the University of Tokyo
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Kazi Zaman
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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SELVARAJ Lawrence
Research center for Nano-Device and System, Nagoya Institute of Technology
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Soga T
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
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MIYOSHI Makoto
Research Center for Nano-Device and System, Nagoya Institute of Technology
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LIU Yang
Research Center for Nano-Device and System, Nagoya Institute of Technology
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ZHANG Baijun
Research Center for Nano-Device and System, Nagoya Institute of Technology
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Liu Yang
Research Center For Nano-device And System Nagoya Institute Of Technology
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Selvaraj Lawrence
Research Center For Nano-device And System Nagoya Institute Of Technology
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Nakada Naoyuki
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Soga T
Nagoya Inst. Technol. Nagoya Jpn
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JIANG Hao
Department of Radiation Medicine, Faculty of Naval Medicine, Second Military Medical University
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Nakamura K
Tokyo Electron Ltd. Tokyo Jpn
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Tanaka Mitsuhiro
Ngk Insulators Ltd.
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Jiang Hao
Department Of Mathematics Xixi Campus Of Zhejiang University
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Sano Y
Division Of Precision Science And Technology And Applied Physics Graduate School Of Engineering Osak
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Sano Yoshiaki
Research And Development Group Oki Electric Industry Co. Lid.
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KAMINISHI Katsuzo
Research Laboratory, Oki Electric Industry Co., Ltd.
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Kaminishi Katsuzo
Research Laboratory Oki Electric Industry Co. Ltd.
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Kaminishi K
Miyazaki Univ. Miyazaki‐shi Jpn
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OGAWA Akira
Department of Neurosurgery, Iwate Medical University School of Medicine
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SOGA Tetsuo
Department of Frontier Materials, Nagoya Institute of Technology
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FREEDSMAN Joseph
Research center for Nano-Device and System, Nagoya Institute of Technology
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Watanabe ARATA
Research center for Nano-Device and System, Nagoya Institute of Technology
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TANAKA Mitsuhiro
NGK INSULATORS, LTD.
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Watanabe Arata
Research Center For Nano-device And System Nagoya Institute Of Technology
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Jimbo Takashi
Department Of Environmental Technology And Urban Planning Nagoya Institute Of Technology:research Ce
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Soga Tetsuo
Department Of Electronics Faculty Of Engineering Nagoya University
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SAKAI Masahiro
Research Center for Nano-Device and System, Nagaya Institute of Technology
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DEGUCHI Tadayoshi
Research Laboratory, New Japan Radio Co., Ltd.
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WAKI Eiji
Research Laboratory, New Japan Radio Co., Ltd.
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NAKAGAWA Atsushi
Research Laboratory, New Japan Radio Co., Ltd.
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JIANG Hao
Research Center for Nano-Device and System, Nagoya Institute of Technology
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TANAKA Mitsuhiro
R&D Division, NGK Insulators Ltd.
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ZHANG Liangying
Functional Materials Research Laboratory, Tongji University
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YAO Xi
Functional Materials Research Laboratory, Tongji University
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SELVARAJ S.
Research Center for Nano-Device and System, Nagoya Institute of Technology
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Deguchi Tadayoshi
Advanced Technology Center, Research Laboratory, New Japan Radio Co., Ltd.
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Liu Y
Division Of Cancer Immunology Department Of Pathology Ohio State University Medical Center
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Selvaraj S.
Research Center For Nano-device And System Nagoya Institute Of Technology
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Yao X
Functional Materials Research Laboratory Tongji University
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Yao Xi
Electronic Materials Research Laoratory Xi'an Jiaotong University
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Zhang L
Functional Materials Research Laboratory Tongji University
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Zhang Liangying
Electronic Materials Research Laoratory Xi'an Jiaotong University
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Freedsman Joseph
Research Center For Nano-device And System Nagoya Institute Of Technology
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Ishida Toshimasa
Research Laboratory Oki Electric Industry Co. Lid
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Zhang Liangying
Functional Materials Research Laboratory Tongji University
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Zhang L
National Institute Of Advanced Industrial Science And Technology
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Ishida Takayuki
Department Of Radiology National Federation Of Health Insurance Societies Osaka Chuo Hospital
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Deguchi Tadayoshi
Research Laboratory New Japan Radio Co. Ltd.
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Deguchi Tadayoshi
Advanced Technology Center Research Laboratory New Japan Radio Co. Ltd.
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Shao Chun
Research Center For Nano-device And System Nagoya Institute Of Technology
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Shao Chun
Department Of Electrical And Electronic Engineering Tokushima University:textile Engineering Institu
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Ogawa A
Shizuoka Univ. Shizuoka‐shi Jpn
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Sakai Masahiro
Research Center For Nano-device And System Nagoya Institute Of Technology:rd Center Ngk Insulators L
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Zhang B
Research Center For Nano-device And System Nagoya Institute Of Technology
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Sun Y
Department Of Applied Physics Hebei University Of Technology
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SUN Yijun
Venture Business Laboratory, Nagoya Institute of Technology
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Ishikawa Hiroyasu
Research Center For Nano-device And System Nagoya Institute Of Technology
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Shao C
Research Center For Nano-device And System Nagoya Institute Of Technology
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Sun Yijun
Acupuncture College Beijing University Of Chinese Medicine
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Oda Osamu
Rd Center Ngk Insulators Ltd.
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Waki Eiji
Research Laboratory New Japan Radio Co. Ltd.
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Jimbo T
Ulvac Inc. Shizuoka Jpn
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Nakaji Masaharu
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Yao Xi
Functional Materials Research Laboratory Tongji University
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Shao Chun
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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Nakagawa Atsushi
Research Laboratory New Japan Radio Co. Ltd.
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Nakagawa Atsushi
Research Laboratories Aquaculture Center Kyowa Hakko Kogyo Co. Ltd
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YU Guolin
Nagoya Institute of Technology
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SOGA Tetsuo
Instrument and Analysis Center, Nagoya Institute of Technology
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江川 孝志
名古屋工業大学極微デバイス機能システム研究センター
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江川 孝志
名古屋工業大学工学部附属極微構造デバイス研究センター
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MIYOSHI Makoto
NGK INSULATORS, LTD.
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SUMIYA Shigeaki
NGK INSULATORS, LTD.
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ICHIMURA Mikiya
NGK INSULATORS, LTD.
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SUGIYAMA Tomohiko
NGK INSULATORS, LTD.
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MAEHARA Sota
NGK INSULATORS, LTD.
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EBISU Hiroshi
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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江川 孝志
Research Center For Nano-device And System Nagoya Institute Of Technology
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Egawa T
Department Of Neuropharmacology Faculty Of Pharmaceutical Sciences Fukuoka University
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Egawa T
Research Center For Nano-device And System Nagoya Institute Of Technology
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Ebisu H
Department Of Physics Nagoya Institute Of Technology
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Ebisu Hiroshi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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HAO Maosheng
Research Center for Nano-Device and System, Nagaya Institute of Technology
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YAMASHITA Meiichi
Research Laboratory, New Japan Radio Co., Ltd.
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ODA Osamu
R&D Division, NGK Insulators Ltd.
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Maehara Sota
Ngk Insulators Ltd.
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Egawa Takashi
Pharmaceutical Research Center Meiji Seika Kaisha Ltd.
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Watanabe Junji
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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WATANABE Toshihide
ATR Optical and Radio Communication Research Laboratory
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ITO TSUYOSHI
Department of Agricultural Chemistry, Faculty of Agriculture, Okayama University
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Miyoshi Makoto
Ngk Insulators Ltd.
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ADACHI Mitsuhiro
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology
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Shibata Tomohiko
Rd Center Ngk Insulators Ltd.
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Soga Tetsuo
Instrument And Analysis Center Nagoya Institute Of Technology
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YANG Mingju
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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Hao Maosheng
Research Center For Nano-device And System Nagoya Institute Of Technology
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KURAOKA Yoshitaka
Corporate R&D, NGK Insulators Ltd.
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TANAKA Mitsuhiro
Corporate R&D, NGK Insulators Ltd.
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ODA Osamu
NGK INSULATORS, LTD.
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MORI Masayoshi
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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NAKADA Naoyuki
1Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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MORI Masayoshi
1Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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ZHAO Guan-Yuan
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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Ichimura Mikiya
Ngk Insulators Ltd.
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Tanaka Tsuyoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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FUJITA Kazuhisa
ATR Optical and Radio Communications Research Laboratories
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THILAKAN Periyasamy
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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Sumiya Shigeaki
Ngk Insulators Ltd.
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YU Guolin
Research Centerfor Micro-Structure Devices, Nagoya Institute of Technology
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Ueda Tetsuzo
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Akiyama Masahiro
Research Laboratory Oki Electric Industry Co. Ltd.
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Akiyama Masahiro
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
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Akiyama Masahiro
Research And Development Group Oki Electric Industry Co. Ltd.
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Adachi Mitsuhiro
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Sugiyama Tomohiko
Ngk Insulators Ltd.
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Ito Tsuyoshi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Ito Tsuyoshi
Department Of Agricultural Chemistry Faculty Of Agriculture Okayama University
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Dong Jie
Nippon Sanso Corporation Tsukuba Laboratories
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Ono Satoru
Research Laboratory New Japan Radio Co. Ltd.
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Yang M
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Ueda Tetsuzo
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Shao Chunlin
Research Center For Nano-device And System Nagoya Institute Of Technology
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SUZUE Takaaki
Research Center for Nano-Device and System, Nagoya Institute of Technology
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Watanabe J
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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UMENO Masayoshi
Enviromental Technology and Urbane Planning, Nagoya Institute of Technology
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Suzue Takaaki
Research Center For Nano-device And System Nagoya Institute Of Technology
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FUJII Yasunori
Department of Physics, College of Science and Engineering Nihon University
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NAKATA Naoyuki
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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ZHAO Guang
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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ZHAO Gangyuan
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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ZHAO Guang-Yuan
Venture Business Laboratory, Nagoya Institute of Technology
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ZHAO Guang
Satellite Venture Business Laboratory, Nagoya Institute of Technology
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ZHAO Guang
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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ZHAO Guang-Yuan
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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ZHAO G.Y.
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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ASANO Kenta
Research Center for Nano-Device and System, Nagoya Institute of Technology
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TANAKA Mitsuhiro
RD Center, NGK INSULATORS, LTD.
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ARULKUMARAN Subramanian
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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OKUI Akihiro
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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TAKIZAWA Toshiyuki
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Kuraoka Yoshitaka
Corporate R&d Ngk Insulators Ltd.
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Okui Akihiro
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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Asano Kenta
Research Center For Nano-device And System Nagoya Institute Of Technology
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Zhao Guang
Department Of Dermatology Airforce General Hospital Of People's Liberation Army
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Fujii Yasunori
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Yang Mingju
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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NAKAZAWA Satoshi
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial, Co. Ltd
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Takizawa Toshiyuki
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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WANG Gang
State Key Laboratory of Optoelectronic Materials and Technologies & School of Chemistry and Chemical
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MURATA Yoshihiko
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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NAKANISHI Naoki
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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MATSUMOTO Kou
Nippon Sanso Corporation, Tsukuba Laboratories
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Nakazawa Satoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
著作論文
- First-Principles Calculation of Bandgap Bowing Parameter for Wurtzite InAlGaN Quaternary Alloy using Large Supercell
- A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al_2O_3 as gate dielectric(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al_2O_3 as gate dielectric(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- Metalorganic Chemical Vapor Deposition and Material Characterization of Lattice-Matched InAlN/GaN Two-Dimensional Electron Gas Heterostructures
- AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer(Session1: Compound Semiconductor Devices)
- AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer(Session1: Compound Semiconductor Devices)
- Reduced gate leakage for AlGaN/GaN HEMTs grown on a-plane (1120) sapphire
- AlGaN UV-B Photodetectors on AlN/sapphire template
- Effects of Growth Temperature of a GaN Cap Layer on Electrical Properties of AlGaN/GaN HFETs
- On the Effects of Gate-Recess Etching in Current-Collapse of Different Cap Layers Grown AlGaN/GaN High-Electron-Mobility Transistors
- Novel quaternary AlInGaN/GaN HFET grown by MOCVD on sapphire substrate
- Improvement in Performance of AlGaN/GaN HFETs by Utilizing a Low-Temperature GaN Cap Layer
- Influence of Growth Temperature on Quaternary AlInGaN Epilayers for Ultraviolet Emission Growth by Metalorganic Chemical Vapor Deposition
- High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer
- Suppression of GaInN/GaN Multi-Quantum-Well Decomposition during Growth of Light-Emitting-Diode Structure : Structure and Mechanical and Thermal Properties of Condensed Matter
- Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE(Heterostructure Microelectronics with TWHM2003)
- Correlation between Electrical and Surface Properties of n-GaN on Sapphire Grown by Metal-Organic Chemical Vapor Deposition
- Realization of GaAS/AlGaAs Lasers on Si Substrates Using Epitaxial Lateral Overgrowth by Metalorganic Chemical Vapor Deposition : Optics and Quantum Electronics
- First Room-Temperature Continuous-Wave Operation of Self-Formed InGaAs Quantum Dot-Like Laser on Si substrate Grown by Metalorganic Chemical Vapor Deposition
- AlGaAs/GaAs Laser Diodes with GaAs Islands Active Region on a Si Substrate with Higher Characteristic Temperature
- Effect of Collection Distance on the Lattice Structure of Anatase Titania Nanoparticles Prepared by Metalorganic Chemical Vapor Deposition : Structure and Mechanical and Thermal Properties of Condensed Matter
- High Anatase-Rutile Transformation Temperature of Anatase Titania Nanoparticles Prepared by Metalorganic Chemical Vapor Deposition : Structure and Mechanical and Thermal Properties of Condensed Matter
- Influence of Deep Pits on the Breakdown of Metalorganic Chemical Vapor Deposition Grown AlGaN/GaN High Electron Mobility Transistors on Silicon
- Polarized Reflectance Spectroscopy and Spectroscopic Ellipsomentry Determination of the Optical Anisotropy of Gallium nitride on Sapphire
- Valence-Band Discontinuity at the AIN/Si Interface
- Characteristics of GaN MESFET Grown on Sapphire Substrate by MOCVD
- High-Temperature Behaviors of GaN Schottky Barrier Diode
- Suppression of Dark-Line Defect Growth in AlGaAs/InGaAs Single Quantum Well Lasers Grown on Si Substrates
- First Fabrication of a Reliable AlGaAs/GaAs LED on Si with Self-Assembled GaAs Islands Active Region
- Influences of Dark Line Defects on Characteristics of AlGaAs/GaAs Quantum Well Lasers Grown on Si Substrates
- First Fabrication of Low-Threshold AlGaAs/GaAs Patterned Quantum Wells Laser Grown on Si Substrate
- Fabrication of Low-Threshold AlGaAs/GaAs Patterned Quantum Well Laser Grown on Si Substrate
- Back-Illuminated GaN Metal-Semiconductor-Metal UV Photodetector With High Internal Gain : Semiconductors
- Recessed Gate AlGaN/GaN HEMT on Sapphire Grown by MOCVD
- Electrical Characteristics of Schottky Contacts on GaN and Al_Ga_N
- High-Mobility AlGaN/GaN Heterostructures Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
- Optical Absorption and Photoluminescence Studies of n-type GaN
- GaN on Si Substrate with AlGaN/AlN Intermediate Layer
- Electrical Transport Properties of GaSb Grown by Molecular Beam Epitaxy
- High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates(Heterostructure Microelectronics with TWHM2003)
- Characteristics of BCl_3 Plasma-Etched GaN Schottky Diodes : Instrumentation, Measurement, and Fabrication Technology
- GaN Metal-Semiconductor-Metal UV Photodetector with Recessed Electrodes : Semiconductors
- High-Transconductance AlGaN/GaN High-Electron-Mobility Transistors on Semi-Insulating Silicon Carbide Substrate : Semiconductors
- High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector
- Characteristics of a GaN Metal Semiconductor Field-Effect Transistor Grown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition
- Pd/GaN Schottky Diode with a Barrier Height of 1.5 eV and a Reasonably Effective Richardson Coefficient
- Fabrication of Flat End Mirror Etched by Focused Ion Beam for GaN-Based Blue-Green Laser Diode
- Optical Degradation of InGaN/AlGaN LED on Sapphire Substrate Grown by MOCVD
- Influence of Annealing Method on Microscopic One-to-One Correlation between Threshold Voltage of GaAs MESFET and Dislocation
- The Dependence of Threshold Voltage Scattering of GaAs MESFET on Annealing Method
- Improved Threshold Voltage Uniformity in GaAs MESFET Using High Purity MOCVD-Grown Buffer Layer as a Substrate for Ion Implantation
- Low Temperature Growth of GaAs on Si Substrate by Chemical Beam Epitaxy
- AlGaAs/GaAs Laser Diodes with GaAs Islands Active Regions on Si Grown by Droplet Epitaxy
- AlGaAs/GaAs Laser Diodes with GaAs Islands Active Regions on Si Substrates Grown by Droplet Epitaxy
- High Efficiency GaAs/Si Monolithic Three-Terminal Cascade Solar Cells Grown by Metal-Organic Chemical Vapor Deposition
- GaAs-Based Vertical-Cavity Surface-Emitting Laser on Si Substrate by Metalorganic Chemical Vapor Deposition
- 1100 Hours Stable Operation in 0.87-μm InGaP/GaAs LED's on Si Substrates Grown by MOCVD
- First Fabrication of AlGaAs/GaAs Double-Heterostructure Light-Emitting Diodes Grown on GaAs (111)A Substrates Using Only Silicon Dopant
- DC Characteristics in High-Quality AlGaN/AlN/GaN High-Electron-Mobility Transistors Grown on AlN/Sapphire Templates
- Vertical GaN-Based Light-Emitting Diodes Structure on Si(111) Substrate with Through-Holes
- Step-stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence (電子デバイス)
- Step-stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence (マイクロ波)
- Visible-Blind Metal-Semiconductor-Metal Photodetectors Based on Undoped AlGaN/GaN High Electron Mobility Transistor Structure
- Novel Quaternary AlInGaN/GaN Heterostructure Field Effect Transistors on Sapphire Substrate
- AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Grown on Epitaxial AlN/Sapphire Templates