Watanabe Arata | Research Center For Nano-device And System Nagoya Institute Of Technology
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概要
- Watanabe Arataの詳細を見る
- 同名の論文著者
- Research Center For Nano-device And System Nagoya Institute Of Technologyの論文著者
関連著者
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Watanabe Arata
Research Center For Nano-device And System Nagoya Institute Of Technology
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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FREEDSMAN Joseph
Research center for Nano-Device and System, Nagoya Institute of Technology
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Watanabe ARATA
Research center for Nano-Device and System, Nagoya Institute of Technology
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SELVARAJ Lawrence
Research center for Nano-Device and System, Nagoya Institute of Technology
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EGAWA Takashi
Research center for Nano-Device and System, Nagoya Institute of Technology
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Egawa Takashi
Research Center For Nano-device And System Nagoya Institute Of Technology
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Selvaraj Lawrence
Research Center For Nano-device And System Nagoya Institute Of Technology
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Freedsman Joseph
Research Center For Nano-device And System Nagoya Institute Of Technology
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Zhu Youhua
Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Chen Zhitao
Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan
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Lu Lin
Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan
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Arata Watanabe
Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan
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Watanabe Arata
Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan
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Zhu Youhua
Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan
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Ahmad Shuhaimi
Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan
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Takashi Egawa
Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan
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Abe Yoshihisa
Technology Development Center, Covalent Materials Corporation, Hadano, Kanagawa 257-8566, Japan
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Fujimori Hiroyuki
Technology Development Center, Covalent Materials Corporation, Hadano, Kanagawa 257-8566, Japan
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Ohmori Noriko
Technology Development Center, Covalent Materials Corporation, Hadano, Kanagawa 257-8566, Japan
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Komiyama Jun
Technology Development Center, Covalent Materials Corporation, Hadano, Kanagawa 257-8566, Japan
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Suzuki Shunichi
Technology Development Center, Covalent Materials Corporation, Hadano, Kanagawa 257-8566, Japan
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Nakanishi Hideo
Technology Development Center, Covalent Materials Corporation, Hadano, Kanagawa 257-8566, Japan
著作論文
- A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al_2O_3 as gate dielectric(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al_2O_3 as gate dielectric(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- High Performance of GaN-Based Light Emitting Diodes Grown on 4-in. Si(111) Substrate
- Effect of Al0.06Ga0.94N/GaN Strained-Layer Superlattices Cladding Underlayer to InGaN-Based Multi-Quantum Well Grown on Si(111) Substrate with AlN/GaN Intermediate Layer
- Characterization of GaN-Based Light Emitting Diodes Grown on 4-in. Si(111) Substrate
- Defect Propagation from 3C-SiC Intermediate Layers to Ⅲ-Nitride Epilayers