Defect Propagation from 3C-SiC Intermediate Layers to Ⅲ-Nitride Epilayers

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概要

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• The propagation of crystal defects from a 3C-SiC intermediate layer (3C-SiC IL) to hexagonal III--nitride epilayers formed by a metalorganic vapor phased epitaxy (MOVPE) has been investigated by observing the interface between the 3C-SiC IL and the hexagonal III--nitride epilayers. The 3C-SiC(111) IL grown on a Si(111) substrate has many stacking faults (SFs) that form along the 3C-SiC{111} planes. The density of the SFs decreases with separation from the Si substrate. The initial III--nitride epilayers have V-shaped trenches due to the SFs of the 3C-SiC IL. However, there are some SFs, that do not generate V-shaped trenches. On the basis of high-resolution cross-sectional observations by transmission electron microscopy and X-ray pole-figure analysis, an atomic model for the SFs is considered in terms of twin bands of 3C-SiC. V-shaped trenches were determined to be formed on protrusions consisting of the twin bands in the 3C-SiC IL.

• The Japan Society of Applied Physicsの論文
• 2012-03-25

著者

• Watanabe Arata

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Egawa Takashi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

• Abe Yoshihisa

  Technology Development Center, Covalent Materials Corporation, Hadano, Kanagawa 257-8566, Japan

• Fujimori Hiroyuki

  Technology Development Center, Covalent Materials Corporation, Hadano, Kanagawa 257-8566, Japan

• Ohmori Noriko

  Technology Development Center, Covalent Materials Corporation, Hadano, Kanagawa 257-8566, Japan

• Komiyama Jun

  Technology Development Center, Covalent Materials Corporation, Hadano, Kanagawa 257-8566, Japan

• Suzuki Shunichi

  Technology Development Center, Covalent Materials Corporation, Hadano, Kanagawa 257-8566, Japan

• Nakanishi Hideo

  Technology Development Center, Covalent Materials Corporation, Hadano, Kanagawa 257-8566, Japan

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