Barrier-Height-Enhanced $n$-GaN Schottky Photodiodes Using a Thin $p$-GaN Surface Layer
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概要
- 論文の詳細を見る
A $p^{+}$-GaN surface layer of 15 nm was incorporated in $n$-GaN Schottky photodiode to enhance the effective Schottky barrier height. A barrier height of 1.09 eV for the normal $n$-GaN Schottky photodiode was increased to the effective barrier height of 1.16 eV. The resulting photodiodes show a reverse dark current density of as low as $4.8\times 10^{-10}$ A/cm2 at $-2$ V bias, which is about three orders of magnitude lower than that of the normal $n$-GaN Schottky photodiode. The lower dark current leads to a significant improvement in the visible rejection ratio. A peak responsivity of 107 mA/W was obtained at $-2$ V bias under the incident power density of 10 μW/cm2, corresponding to an external quantum efficiency of 38%.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-07-15
著者
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Jimbo Takashi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Jiang Hao
Research Center For Nano-device And System Nagoya Institute Of Technology
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Ishikawa Hiroyasu
Research And Development Laboratories Kokusai Denshin Denwa Co. Ltd.
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Dou Yanbo
Research Center For Nano-device And System Nagoya Institute Of Technology
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Shao Chunlin
Research Center For Nano-device And System Nagoya Institute Of Technology
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Jiang Hao
Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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Dou Yanbo
Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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