Optoelectronic Integrated Circuits Grown on Si Substrates (Special Issue on Opto-Electronics and LSI)
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概要
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We have demonstrated the successful fabrication of the monolithic integration of a GaAs metal-semiconductor field-effect transistor (MESFET), an AlGaAs / InGaAs laser and a p-n photodetector grown on a SiO_2 back-coated p-Si substrate using selective regrowth by metalorganic chemical vapor deposition (MOCVD). The use of SiO_2 back-coated Si substrate is effective in suppressing unintentional Si autodoping and obtaining a good pinch-off GaAs MESFET. The MESFET with 2.5×400 μm^2 gate exhibited a transconductance of 90 mS / mm and a threshold voltage of -2.2 V. The reliability of the laser on the Si substrate can be improved by the strain-relieved AlGaAs / InGaAs laser with the InGaAs intermediate layer. The longest lifetime of the laser is 8 h at 27℃. During the GaAs layer growth, the p-n photodetector is formed near the surface of the p-Si substrate by diffusing the As atoms.
- 1993-01-25
著者
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Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Jimbo Takashi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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EGAWA Takashi
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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