Assessment of the Structural Properties of GaAs/Si Epilayers Using X-Ray (004) and (220) Reflections

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1996-12-15

著者

• SOGA Tetsuo

  Instrument and Analysis Center, Nagoya Institute of Technology

• JIMBO Takashi

  Research Center for Micro-Structure Device, Nagoya Institute of Technology

• UMENO Masayoshi

  Department of electrical and Computer Engineering, Nagoya Institute of Technology

• Umeno M

  Department Of Electronic Engineering Chubu University

• Umeno Masayoshi

  Department Of Electric And Computer Engineering Nagoya Institute Of Technology

• Soga T

  Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology

• HAO Maosheng

  Department of Electrical and Electronic Engineering, The University of Tokushima

• Umeno Masataka

  Department Of Material And Life Science Graduate School Of Engineering Osaka University

• Soga T

  Nagoya Inst. Technol. Nagoya Jpn

• Soga Tetsuo

  Instrument And Analysis Center Nagoya Institute Of Technology

• Hao Maosheng

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology

• Shao Chun

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Shao C

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Shao Chunlin

  Department Of Ion Beam Bioengineering Institute Of Plasma Physics Academia Sinica

• WANG Yutian

  Institute of Semiconductors, Chinese Academy of Sciences

• Wang Yutian

  Institute Of Semiconductors Chinese Academy Of Sciences

• LIANG Junwu

  Institute of Semiconductors, Chinese Academy of Sciences

• Liang Junwu

  Institute Of Semiconductors Chinese Academy Of Sciences

• Umeno M

  Department Of Management And Information Science Faculty Of Engineering Fukui University Of Technolo

• Umeno M

  Nagoya Inst. Technology

• WANG Yutian

  Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf

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