Metal Organic Chemical Vapor Deposition Growth and Characterization of AlInN-Based Schottky Ultraviolet Photodiodes on AlN Template

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概要

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• AlInN-based Schottky ultraviolet photodiodes on AlN template are demonstrated. AlInN/GaN structures are grown using metal organic chemical vapor deposition. AlInN layer on AlN template exhibits high crystal quality and good surface morphology as it was confirmed respectively through X-ray diffraction (XRD) and atomic force microscope (AFM). The fabricated Schottky photodiodes on AlN template have the leakage current of 16 nA at a reverse voltage of 5 V and the cut-off wavelength around 260 nm. A zero-bias peak responsivity of 33 mA/W is achieved at 230 nm, corresponding to the quantum efficiency of 17%. This efficiency for AlInN-based photodiode on AlN template is superior to the photodiode grown on sapphire with low temperature buffer layer (LT-BL). It is possible to realize a high-performance AlInN-based Schottky photodiode by using AlN template as a substrate.

• 2011-01-25

著者

• JIMBO Takashi

  Research Center for Micro-Structure Device, Nagoya Institute of Technology

• 酒井 佑輔

  名古屋工業大学極微デバイス機能システム研究センター

• Egawa Takashi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

• Sakai Yusuke

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

• Egawa Takashi

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan

• Morimoto Tomohiko

  Graduation School of Engineering, Nagoya Institute of Technology, Nagoya 466-8555, Japan

• Jimbo Takashi

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan

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