Effect of Al0.06Ga0.94N/GaN Strained-Layer Superlattices Cladding Underlayer to InGaN-Based Multi-Quantum Well Grown on Si(111) Substrate with AlN/GaN Intermediate Layer

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概要

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• We report effect of the insertion of Al0.06Ga0.94N/GaN strained-layer superlattices (SLSs) cladding underlayer to InGaN-based multi-quantum well (MQW) structure grown on Si(111) substrate with AlN/GaN intermediate layer. The Al0.06Ga0.94N/GaN SLS underlayer improves emission wavelength uniformity and shows a narrower emission full-width at half-maximum (FWHM) than that of conventional GaN underlayer. A Gaussian fitting was performed to photoluminescence (PL) spectra to obtain emission wavelength behavior and integrated intensity of the peak energy. A higher MQW internal quantum efficiency ($\eta_{\text{iqe}}$) of 29.4% is obtained in sample with Al0.06Ga0.94N/GaN SLS underlayer than that of 20.6% in GaN underlayer. Transmission electron microscopy (TEM) analysis indicates that the Al0.06Ga0.94N/GaN SLS layer abruptly bends threading dislocation lines thus reduces threading dislocation density to the MQW. Reciprocal space mapping (RSM) suggests that compressive strain in the GaN portion of Al0.06Ga0.94N/GaN SLS forces the abrupt inclination of the threading dislocations.

• 2010-02-25

著者

• Watanabe Arata

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Arata Watanabe

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan

• Egawa Takashi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

• Ahmad Shuhaimi

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan

• Takashi Egawa

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan

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