Takashi Egawa | Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan

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概要

関連著者

Watanabe Arata
Research Center For Nano-device And System Nagoya Institute Of Technology
Arata Watanabe
Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan
Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
Ahmad Shuhaimi
Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan
Takashi Egawa
Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan

著作論文

Effect of Al0.06Ga0.94N/GaN Strained-Layer Superlattices Cladding Underlayer to InGaN-Based Multi-Quantum Well Grown on Si(111) Substrate with AlN/GaN Intermediate Layer

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