Infrared Study on Graded Lattice Quality in Thin GaN Crystals Grown on Sapphire
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概要
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Transverse-optical (TO) and longitudinal-optical (LO) phonons in Si-doped and undoped $n$-GaN films have been studied by infrared reflection spectroscopy. The former film has been grown by metalorganic chemical vapor deposition (MOCVD) to a thickness of 2.3 μm, while the latter by hydride vapor phase epitaxy (HVPE) to a thickness of 35 μm. Both films are deposited on the $c$-surface of sapphire substrates with the surface of the $c$-plane of the wurtzite structure. Oblique-incidence infrared reflection spectroscopy has permitted us to observe the A1 mode, as well as the E1 mode, of polar optical phonons. The reflection spectra observed for $s$- and $ p$-polarizations can be described well in terms of Gervais and Piriou's four-parameter semi-quantum oscillator model taking account of the LO-phonon–plasmon coupling. It is found that in the MOCVD-grown film, the damping energies of the phonons are markedly graded along the growth direction of the film. It is suggested that the lattice strain is quite large in the interface zone but is reduced rapidly upon going beyond about 1 μm from the interface. Accordingly, the HVPE film has a good lattice quality throughout the film.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-02-15
著者
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Yokoi Hiroyuki
Department Of Cardiology Kokura Memorial Hospital
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Kuroda Noritaka
Department Of Materials Science And Engineering Graduate School Of Science And Technology Kumamoto U
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Ishikawa Hiroyasu
Research And Development Laboratories Kokusai Denshin Denwa Co. Ltd.
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Watanabe Junji
Department Of Applied Chemistry Graduate School Of Engineering Osaka University
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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Ishikawa Hiroyasu
Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan
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Kitayama Takuya
Department of Mechanical Engineering and Materials Science, Faculty of Engineering, Kumamoto University, Kumamoto 860-8555, Japan
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Nishi Yohei
Department of Mechanical Engineering and Materials Science, Faculty of Engineering, Kumamoto University, Kumamoto 860-8555, Japan
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Saiki Kazuya
Department of Mechanical Engineering and Materials Science, Faculty of Engineering, Kumamoto University, Kumamoto 860-8555, Japan
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Cho Meoungwham
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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Yokoi Hiroyuki
Department of Mechanical Engineering and Materials Science, Faculty of Engineering, Kumamoto University, Kumamoto 860-8555, Japan
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