Effect of Various Interlayers on Epiwafer Bowing in AlGaN/GaN High-Electron-Mobility Transistor Structures

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概要

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• We have systematically studied the effect of various interlayers on epiwafer bowing in AlGaN/GaN high-electron-mobility transistor (HEMT) structures on sapphire substrates by using an interlayer insertion method. The interlayers including aluminum increase the epiwafer bowing independently of growth temperature. However, both InGaN-based interlayers and low-temperature-deposited GaN interlayers suppress the epiwafer bowing. When multilayers are used as interlayers, the effect on epiwafer bowing is enhanced compared with that in the case of using single interlayers. The minimum bowing values were lower than 10 μm, which were accomplished by using multilayers. The crystalline qualities of AlGaN/GaN HEMTs with interlayers were satisfactory and the performance of these HEMTs was better than that of conventional AlGaN/GaN HEMTs without interlayers. Epiwafers with reduced bowing exhibited a reduced strain in GaN layers compared with that of GaN layers with larger bowing, which indicates that strain control in the epitaxial layers is important for reducing the epiwafer bowing.

• 2004-12-15

著者

• Hao Maosheng

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Sakai Masahiro

  Research Center For Nano-device And System Nagoya Institute Of Technology:rd Center Ngk Insulators L

• Ishikawa Hiroyasu

  Research And Development Laboratories Kokusai Denshin Denwa Co. Ltd.

• Egawa Takashi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

• Hao Maosheng

  Research Center for Nano-Device and System, Nagaya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

• Ishikawa Hiroyasu

  Research Center for Nano-Device and System, Nagaya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

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