Studies of Electron Beam Evaporated SiO2/AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

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概要

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• The metal–oxide–semiconductor high-electron-mobility transistors (MOSHEMTs) have been demonstrated and its dc characteristics were examined and compared with the conventional AlGaN/GaN HEMTs. The electron beam (EB) evaporated SiO2 layers were used as a gate-insulator. Capacitance–voltage plot of MOS contacts revealed the existence of injection type complete accumulation up to +4.0 V. The fabricated MOSHEMTs have exhibited better dc characteristics when compared with the conventional AlGaN/GaN HEMTs. The MOSHEMTs could operate at positive gate-biases as high as +4.0 V. The 2.0-μm-gate-length EB-SiO2 MOSHEMTs exhibited higher drain current density and extrinsic transconductance of 856 mA/mm and 145 mS/mm when compared to the conventional AlGaN/GaN HEMTs. The gate leakage current ($I_{\text{gLeak}}$) was three orders of magnitude lower than that of the conventional AlGaN/GaN HEMTs. The stable device operations at high operating voltages with low $I_{\text{gLeak}}$ and high $g_{\text{mmax}}$ values leads to the occurrence of low trap density at EB-SiO2/AlGaN interface.

• Japan Society of Applied Physicsの論文
• 2005-06-10

著者

• Arulkumaran Subramaniam

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Ishikawa Hiroyasu

  Research And Development Laboratories Kokusai Denshin Denwa Co. Ltd.

• Egawa Takashi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

• Ishikawa Hiroyasu

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Showa-ku, Gokiso-cho, Nagoya 466-8555, Japan

• Arulkumaran Subramaniam

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Showa-ku, Gokiso-cho, Nagoya 466-8555, Japan

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