Origin and Appearance of Defective Pits in the Gate--Drain Region during Reliability Measurements of AlGaN/GaN High-Electron-Mobility Transistors on Si

スポンサーリンク

概要

• 論文の詳細を見る

• The reliability of AlGaN/GaN high-electron-mobility transistors (HEMTs) on Si has been investigated using step-stress measurement and examined using scanning electron microscopy and atomic force microscopy. The illumination spots formed were confirmed to be pits with a depth of 100 nm. These pits formed at the drain-edge were found to increase and migrate towards the gate-edge for higher drain-stress voltages. The off-state breakdown voltage confirms the increase in source and substrate leakage currents dominating the device breakdown in addition to the gate leakage current. The nature and depth of pits reveals that the influence of i-GaN buffer cannot be excluded in reliability degradation.

• The Japan Society of Applied Physicsの論文
• 2013-11-25

著者

• Wakejima Akio

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Egawa Takashi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

• Wilson Amalraj

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan

関連論文

• First-Principles Calculation of Bandgap Bowing Parameter for Wurtzite InAlGaN Quaternary Alloy using Large Supercell
• A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al_2O_3 as gate dielectric(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al_2O_3 as gate dielectric(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• Influence of Ammonia in the Deposition Process of SiN on the Performance of SiN/AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors on 4-in. Si(111)
• Metalorganic Chemical Vapor Deposition and Material Characterization of Lattice-Matched InAlN/GaN Two-Dimensional Electron Gas Heterostructures
• AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer(Session1: Compound Semiconductor Devices)
• Reduced gate leakage for AlGaN/GaN HEMTs grown on a-plane (1120) sapphire
• Effects of Growth Temperature of a GaN Cap Layer on Electrical Properties of AlGaN/GaN HFETs
• On the Effects of Gate-Recess Etching in Current-Collapse of Different Cap Layers Grown AlGaN/GaN High-Electron-Mobility Transistors
• Novel quaternary AlInGaN/GaN HFET grown by MOCVD on sapphire substrate
• Improvement in Performance of AlGaN/GaN HFETs by Utilizing a Low-Temperature GaN Cap Layer
• Influence of Growth Temperature on Quaternary AlInGaN Epilayers for Ultraviolet Emission Growth by Metalorganic Chemical Vapor Deposition
• High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer
• Suppression of GaInN/GaN Multi-Quantum-Well Decomposition during Growth of Light-Emitting-Diode Structure : Structure and Mechanical and Thermal Properties of Condensed Matter
• Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE(Heterostructure Microelectronics with TWHM2003)
• Correlation between Electrical and Surface Properties of n-GaN on Sapphire Grown by Metal-Organic Chemical Vapor Deposition
• Realization of GaAS/AlGaAs Lasers on Si Substrates Using Epitaxial Lateral Overgrowth by Metalorganic Chemical Vapor Deposition : Optics and Quantum Electronics
• First Room-Temperature Continuous-Wave Operation of Self-Formed InGaAs Quantum Dot-Like Laser on Si substrate Grown by Metalorganic Chemical Vapor Deposition
• AlGaAs/GaAs Laser Diodes with GaAs Islands Active Region on a Si Substrate with Higher Characteristic Temperature
• Effect of Collection Distance on the Lattice Structure of Anatase Titania Nanoparticles Prepared by Metalorganic Chemical Vapor Deposition : Structure and Mechanical and Thermal Properties of Condensed Matter
• High Anatase-Rutile Transformation Temperature of Anatase Titania Nanoparticles Prepared by Metalorganic Chemical Vapor Deposition : Structure and Mechanical and Thermal Properties of Condensed Matter
• Influence of Deep Pits on the Breakdown of Metalorganic Chemical Vapor Deposition Grown AlGaN/GaN High Electron Mobility Transistors on Silicon
• Polarized Reflectance Spectroscopy and Spectroscopic Ellipsomentry Determination of the Optical Anisotropy of Gallium nitride on Sapphire
• Valence-Band Discontinuity at the AIN/Si Interface
• Characteristics of GaN MESFET Grown on Sapphire Substrate by MOCVD
• High-Temperature Behaviors of GaN Schottky Barrier Diode
• Suppression of Dark-Line Defect Growth in AlGaAs/InGaAs Single Quantum Well Lasers Grown on Si Substrates
• First Fabrication of a Reliable AlGaAs/GaAs LED on Si with Self-Assembled GaAs Islands Active Region
• Influences of Dark Line Defects on Characteristics of AlGaAs/GaAs Quantum Well Lasers Grown on Si Substrates
• First Fabrication of Low-Threshold AlGaAs/GaAs Patterned Quantum Wells Laser Grown on Si Substrate
• Fabrication of Low-Threshold AlGaAs/GaAs Patterned Quantum Well Laser Grown on Si Substrate
• Back-Illuminated GaN Metal-Semiconductor-Metal UV Photodetector With High Internal Gain : Semiconductors
• Recessed Gate AlGaN/GaN HEMT on Sapphire Grown by MOCVD
• Electrical Characteristics of Schottky Contacts on GaN and Al_Ga_N
• High-Mobility AlGaN/GaN Heterostructures Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
• Optical Absorption and Photoluminescence Studies of n-type GaN
• GaN on Si Substrate with AlGaN/AlN Intermediate Layer
• Electrical Transport Properties of GaSb Grown by Molecular Beam Epitaxy
• High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates(Heterostructure Microelectronics with TWHM2003)
• Improved Characteristics of Blue and Green InGaN-Based Light-Emitting Diodes on Si Grown by Metalorganic Chemical Vapor Deposition
• Characteristics of BCl_3 Plasma-Etched GaN Schottky Diodes : Instrumentation, Measurement, and Fabrication Technology
• GaN Metal-Semiconductor-Metal UV Photodetector with Recessed Electrodes : Semiconductors
• High-Transconductance AlGaN/GaN High-Electron-Mobility Transistors on Semi-Insulating Silicon Carbide Substrate : Semiconductors
• High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector
• Characteristics of a GaN Metal Semiconductor Field-Effect Transistor Grown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition
• Pd/GaN Schottky Diode with a Barrier Height of 1.5 eV and a Reasonably Effective Richardson Coefficient
• Fabrication of Flat End Mirror Etched by Focused Ion Beam for GaN-Based Blue-Green Laser Diode
• Optical Degradation of InGaN/AlGaN LED on Sapphire Substrate Grown by MOCVD
• Influence of Annealing Method on Microscopic One-to-One Correlation between Threshold Voltage of GaAs MESFET and Dislocation
• The Dependence of Threshold Voltage Scattering of GaAs MESFET on Annealing Method
• Improved Threshold Voltage Uniformity in GaAs MESFET Using High Purity MOCVD-Grown Buffer Layer as a Substrate for Ion Implantation
• AlGaAs/GaAs Laser Diodes with GaAs Islands Active Regions on Si Grown by Droplet Epitaxy
• AlGaAs/GaAs Laser Diodes with GaAs Islands Active Regions on Si Substrates Grown by Droplet Epitaxy
• Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal--Oxide--Semiconductor High-Electron-Mobility Transistors
• High Performance of GaN-Based Light Emitting Diodes Grown on 4-in. Si(111) Substrate
• High Efficiency GaAs/Si Monolithic Three-Terminal Cascade Solar Cells Grown by Metal-Organic Chemical Vapor Deposition
• Metal Organic Chemical Vapor Deposition Growth and Characterization of AlInN-Based Schottky Ultraviolet Photodiodes on AlN Template
• Deep Traps in InAlN Lattice-Matched to GaN Grown by Metal Organic Chemical Vapor Deposition Studied by Deep-Level Transient Spectroscopy
• Effect of Al0.06Ga0.94N/GaN Strained-Layer Superlattices Cladding Underlayer to InGaN-Based Multi-Quantum Well Grown on Si(111) Substrate with AlN/GaN Intermediate Layer
• GaAs-Based Vertical-Cavity Surface-Emitting Laser on Si Substrate by Metalorganic Chemical Vapor Deposition
• 1100 Hours Stable Operation in 0.87-μm InGaP/GaAs LED's on Si Substrates Grown by MOCVD
• Device Characteristics of Metalorganic Chemical Vapor Deposition-Grown InAlN/GaN High-Electron-Mobility Transistors on AlN/Sapphire Template
• Studies on the Influences of $i$-GaN, $n$-GaN, $ p$-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors
• Improved Power Device Figure-of-Merit ($4.0\times 10^{8}$ V2 $\Omega^{-1}$ cm-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si
• DC Characteristics in High-Quality AlGaN/AlN/GaN High-Electron-Mobility Transistors Grown on AlN/Sapphire Templates
• Vertical GaN-Based Light-Emitting Diodes Structure on Si(111) Substrate with Through-Holes
• Epitaxial Graphene on Si(111) Substrate Grown by Annealing 3C-SiC/Carbonized Silicon (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
• A comparison on the Electrical Characteristics of SiO2, SiON and SiN as the Gate Insulators for the Fabrication of AlGaN/GaN Metal–Oxide/Insulator–Semiconductor High-Electron Mobility-Transistors
• Step-stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence (電子デバイス)
• Step-stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence (マイクロ波)
• Characterization of GaN-Based Light Emitting Diodes Grown on 4-in. Si(111) Substrate
• Step stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence
• Visible-Blind Metal-Semiconductor-Metal Photodetectors Based on Undoped AlGaN/GaN High Electron Mobility Transistor Structure
• Effect of Various Interlayers on Epiwafer Bowing in AlGaN/GaN High-Electron-Mobility Transistor Structures
• Step stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence
• Novel Quaternary AlInGaN/GaN Heterostructure Field Effect Transistors on Sapphire Substrate
• AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Grown on Epitaxial AlN/Sapphire Templates
• Metal–Organic Chemical Vapor Deposition Growth and Characterization of InAlGaN Multiple Quantum Wells
• Effect of Growth Temperature on Structural Quality of InAlN Layer Lattice Matched to GaN Grown by Metal Organic Chemical Vapor Deposition
• Studies of Electron Beam Evaporated SiO2/AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors
• Correlation between Electrical and Surface Properties of n-GaN on Sapphire Grown by Metal-Organic Chemical Vapor Deposition
• Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate
• Comparative Study on the Properties of GaNAs/GaAs Triple Quantum Wells Annealed by Different Methods
• Formation Mechanism for High-Surface-Area Anatase Titania Nanoparticles Prepared by Metalorganic Chemical Vapor Deposition
• Barrier-Height-Enhanced $n$-GaN Schottky Photodiodes Using a Thin $p$-GaN Surface Layer
• Suppression of Crack Generation in GaN/AlGaN Distributed Bragg Reflector on Sapphire by the Insertion of GaN/AlGaN Superlattice Grown by Metal-Organic Chemical Vapor Deposition
• Infrared Study on Graded Lattice Quality in Thin GaN Crystals Grown on Sapphire
• Demonstration of AlGaN/GaN High Electron Mobility Transistors on a-Plane $(11\bar{2}0)$ Sapphire
• Influence of Growth Parameters and Thickness of AlN Spacer on Electrical Properties of AlGaN/AlN/GaN High-Electron-Mobility Transistors Grown on 4-Inch Si Substrate
• Effect of GaN Buffer Layer Growth Pressure on the Device Characteristics of AlGaN/GaN High-Electron-Mobility Transistors on Si
• High-Mobility AlGaN/GaN Heterostructures Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
• Origin and Appearance of Defective Pits in the Gate--Drain Region during Reliability Measurements of AlGaN/GaN High-Electron-Mobility Transistors on Si
• High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer
• Three Growth-Temperature-Dependent Regions for Nitrogen Incorporation in GaNAs Grown by Chemical Beam Epitaxy
• Defect Propagation from 3C-SiC Intermediate Layers to Ⅲ-Nitride Epilayers
• Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200mm Silicon (111) Substrate

もっと見る 閉じる

スポンサーリンク