Device Characteristics of Metalorganic Chemical Vapor Deposition-Grown InAlN/GaN High-Electron-Mobility Transistors on AlN/Sapphire Template

スポンサーリンク

概要

• 論文の詳細を見る

• InAlN/GaN epilayer on AlN/Sapphire template was grown by metalorganic chemical vapor deposition (MOCVD) with a very high electron sheet carrier density $n_{\text{s}} = 2.6\times 10^{13}$ cm-2 and a Hall mobility as high as $\mu_{\text{Hall}} = 1170$ cm2 V-1 s-1 at room temperature. The electrical characteristics of the fabricated high-electron-mobility transistors (HEMTs) having 2 μm gate length and 15 μm gate width were demonstrated. Maximal-drain-current $I_{\text{Dmax}} = 1299$ mA/mm, and maximal transconductance $g_{\text{mmax}} = 280$ mS/mm were achieved for the InAlN barrier layer thickness of 10 nm. Reduced current collapse and as well as breakdown voltage as high as 400 V were observed.

• 2009-04-25

著者

• TANAKA Mitsuhiro

  R&D Division, NGK Insulators Ltd.

• Selvaraj Susai

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Egawa Takashi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

• Selvaraj Susai

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

• Tanaka Mitsuhiro

  R&D Division, NGK Insulators Ltd., Suda-cho, Mizuho-ku, Nagoya 467-8530, Japan

• Selvaraj Josephine

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

• Miyoshi Makoto

  R&D Division, NGK Insulators Ltd., Suda-cho, Mizuho-ku, Nagoya 467-8530, Japan

• Kuraoka Yoshitaka

  R&D Division, NGK Insulators Ltd., Suda-cho, Mizuho-ku, Nagoya 467-8530, Japan

• Kuraoka Yoshitaka

  R&D Division, NGK Insulators Ltd., Suda-cho, Mizuho-ku, Nagoya 467-8530, Japan

• Miyoshi Makoto

  R&D Division, NGK Insulators Ltd., Suda-cho, Mizuho-ku, Nagoya 467-8530, Japan

関連論文

• First-Principles Calculation of Bandgap Bowing Parameter for Wurtzite InAlGaN Quaternary Alloy using Large Supercell
• A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al_2O_3 as gate dielectric(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al_2O_3 as gate dielectric(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• Influence of Ammonia in the Deposition Process of SiN on the Performance of SiN/AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors on 4-in. Si(111)
• Metalorganic Chemical Vapor Deposition and Material Characterization of Lattice-Matched InAlN/GaN Two-Dimensional Electron Gas Heterostructures
• AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer(Session1: Compound Semiconductor Devices)
• Reduced gate leakage for AlGaN/GaN HEMTs grown on a-plane (1120) sapphire
• Effects of Growth Temperature of a GaN Cap Layer on Electrical Properties of AlGaN/GaN HFETs
• On the Effects of Gate-Recess Etching in Current-Collapse of Different Cap Layers Grown AlGaN/GaN High-Electron-Mobility Transistors
• Novel quaternary AlInGaN/GaN HFET grown by MOCVD on sapphire substrate
• Characterization of Different-Al-Content AlGaN/GaN Heterostructures and High-Electron-Mobility Transistors Grown on 100-mm-Diameter Sapphire Substrates by Metalorganic Vapor Phase Epitaxy
• Improvement in Performance of AlGaN/GaN HFETs by Utilizing a Low-Temperature GaN Cap Layer
• Influence of Growth Temperature on Quaternary AlInGaN Epilayers for Ultraviolet Emission Growth by Metalorganic Chemical Vapor Deposition
• High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer
• Suppression of GaInN/GaN Multi-Quantum-Well Decomposition during Growth of Light-Emitting-Diode Structure : Structure and Mechanical and Thermal Properties of Condensed Matter
• Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE(Heterostructure Microelectronics with TWHM2003)
• Correlation between Electrical and Surface Properties of n-GaN on Sapphire Grown by Metal-Organic Chemical Vapor Deposition
• Realization of GaAS/AlGaAs Lasers on Si Substrates Using Epitaxial Lateral Overgrowth by Metalorganic Chemical Vapor Deposition : Optics and Quantum Electronics
• First Room-Temperature Continuous-Wave Operation of Self-Formed InGaAs Quantum Dot-Like Laser on Si substrate Grown by Metalorganic Chemical Vapor Deposition
• AlGaAs/GaAs Laser Diodes with GaAs Islands Active Region on a Si Substrate with Higher Characteristic Temperature
• Effect of Collection Distance on the Lattice Structure of Anatase Titania Nanoparticles Prepared by Metalorganic Chemical Vapor Deposition : Structure and Mechanical and Thermal Properties of Condensed Matter
• High Anatase-Rutile Transformation Temperature of Anatase Titania Nanoparticles Prepared by Metalorganic Chemical Vapor Deposition : Structure and Mechanical and Thermal Properties of Condensed Matter
• Influence of Deep Pits on the Breakdown of Metalorganic Chemical Vapor Deposition Grown AlGaN/GaN High Electron Mobility Transistors on Silicon
• Polarized Reflectance Spectroscopy and Spectroscopic Ellipsomentry Determination of the Optical Anisotropy of Gallium nitride on Sapphire
• Valence-Band Discontinuity at the AIN/Si Interface
• Characteristics of GaN MESFET Grown on Sapphire Substrate by MOCVD
• High-Temperature Behaviors of GaN Schottky Barrier Diode
• Suppression of Dark-Line Defect Growth in AlGaAs/InGaAs Single Quantum Well Lasers Grown on Si Substrates
• First Fabrication of a Reliable AlGaAs/GaAs LED on Si with Self-Assembled GaAs Islands Active Region
• Influences of Dark Line Defects on Characteristics of AlGaAs/GaAs Quantum Well Lasers Grown on Si Substrates
• First Fabrication of Low-Threshold AlGaAs/GaAs Patterned Quantum Wells Laser Grown on Si Substrate
• Fabrication of Low-Threshold AlGaAs/GaAs Patterned Quantum Well Laser Grown on Si Substrate
• Back-Illuminated GaN Metal-Semiconductor-Metal UV Photodetector With High Internal Gain : Semiconductors
• Recessed Gate AlGaN/GaN HEMT on Sapphire Grown by MOCVD
• Electrical Characteristics of Schottky Contacts on GaN and Al_Ga_N
• High-Mobility AlGaN/GaN Heterostructures Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
• Optical Absorption and Photoluminescence Studies of n-type GaN
• GaN on Si Substrate with AlGaN/AlN Intermediate Layer
• Electrical Transport Properties of GaSb Grown by Molecular Beam Epitaxy
• High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates(Heterostructure Microelectronics with TWHM2003)
• Improved Characteristics of Blue and Green InGaN-Based Light-Emitting Diodes on Si Grown by Metalorganic Chemical Vapor Deposition
• Characteristics of BCl_3 Plasma-Etched GaN Schottky Diodes : Instrumentation, Measurement, and Fabrication Technology
• GaN Metal-Semiconductor-Metal UV Photodetector with Recessed Electrodes : Semiconductors
• High-Transconductance AlGaN/GaN High-Electron-Mobility Transistors on Semi-Insulating Silicon Carbide Substrate : Semiconductors
• High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector
• Characteristics of a GaN Metal Semiconductor Field-Effect Transistor Grown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition
• Pd/GaN Schottky Diode with a Barrier Height of 1.5 eV and a Reasonably Effective Richardson Coefficient
• Fabrication of Flat End Mirror Etched by Focused Ion Beam for GaN-Based Blue-Green Laser Diode
• Optical Degradation of InGaN/AlGaN LED on Sapphire Substrate Grown by MOCVD
• Influence of Annealing Method on Microscopic One-to-One Correlation between Threshold Voltage of GaAs MESFET and Dislocation
• The Dependence of Threshold Voltage Scattering of GaAs MESFET on Annealing Method
• Improved Threshold Voltage Uniformity in GaAs MESFET Using High Purity MOCVD-Grown Buffer Layer as a Substrate for Ion Implantation
• AlGaAs/GaAs Laser Diodes with GaAs Islands Active Regions on Si Grown by Droplet Epitaxy
• AlGaAs/GaAs Laser Diodes with GaAs Islands Active Regions on Si Substrates Grown by Droplet Epitaxy
• Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal--Oxide--Semiconductor High-Electron-Mobility Transistors
• High Performance of GaN-Based Light Emitting Diodes Grown on 4-in. Si(111) Substrate
• High Efficiency GaAs/Si Monolithic Three-Terminal Cascade Solar Cells Grown by Metal-Organic Chemical Vapor Deposition
• Metal Organic Chemical Vapor Deposition Growth and Characterization of AlInN-Based Schottky Ultraviolet Photodiodes on AlN Template
• Deep Traps in InAlN Lattice-Matched to GaN Grown by Metal Organic Chemical Vapor Deposition Studied by Deep-Level Transient Spectroscopy
• Effect of Al0.06Ga0.94N/GaN Strained-Layer Superlattices Cladding Underlayer to InGaN-Based Multi-Quantum Well Grown on Si(111) Substrate with AlN/GaN Intermediate Layer
• GaAs-Based Vertical-Cavity Surface-Emitting Laser on Si Substrate by Metalorganic Chemical Vapor Deposition
• 1100 Hours Stable Operation in 0.87-μm InGaP/GaAs LED's on Si Substrates Grown by MOCVD
• Device Characteristics of Metalorganic Chemical Vapor Deposition-Grown InAlN/GaN High-Electron-Mobility Transistors on AlN/Sapphire Template
• Studies on the Influences of $i$-GaN, $n$-GaN, $ p$-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors
• Improved Power Device Figure-of-Merit ($4.0\times 10^{8}$ V2 $\Omega^{-1}$ cm-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si
• DC Characteristics in High-Quality AlGaN/AlN/GaN High-Electron-Mobility Transistors Grown on AlN/Sapphire Templates
• Vertical GaN-Based Light-Emitting Diodes Structure on Si(111) Substrate with Through-Holes
• Epitaxial Graphene on Si(111) Substrate Grown by Annealing 3C-SiC/Carbonized Silicon (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
• A comparison on the Electrical Characteristics of SiO2, SiON and SiN as the Gate Insulators for the Fabrication of AlGaN/GaN Metal–Oxide/Insulator–Semiconductor High-Electron Mobility-Transistors
• Step-stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence (電子デバイス)
• Step-stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence (マイクロ波)
• Characterization of GaN-Based Light Emitting Diodes Grown on 4-in. Si(111) Substrate
• Step stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence
• Visible-Blind Metal-Semiconductor-Metal Photodetectors Based on Undoped AlGaN/GaN High Electron Mobility Transistor Structure
• Effect of Various Interlayers on Epiwafer Bowing in AlGaN/GaN High-Electron-Mobility Transistor Structures
• Step stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence
• Novel Quaternary AlInGaN/GaN Heterostructure Field Effect Transistors on Sapphire Substrate
• AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Grown on Epitaxial AlN/Sapphire Templates
• Metal–Organic Chemical Vapor Deposition Growth and Characterization of InAlGaN Multiple Quantum Wells
• Effect of Growth Temperature on Structural Quality of InAlN Layer Lattice Matched to GaN Grown by Metal Organic Chemical Vapor Deposition
• Studies of Electron Beam Evaporated SiO2/AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors
• Correlation between Electrical and Surface Properties of n-GaN on Sapphire Grown by Metal-Organic Chemical Vapor Deposition
• Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate
• Comparative Study on the Properties of GaNAs/GaAs Triple Quantum Wells Annealed by Different Methods
• Formation Mechanism for High-Surface-Area Anatase Titania Nanoparticles Prepared by Metalorganic Chemical Vapor Deposition
• Barrier-Height-Enhanced $n$-GaN Schottky Photodiodes Using a Thin $p$-GaN Surface Layer
• Suppression of Crack Generation in GaN/AlGaN Distributed Bragg Reflector on Sapphire by the Insertion of GaN/AlGaN Superlattice Grown by Metal-Organic Chemical Vapor Deposition
• Infrared Study on Graded Lattice Quality in Thin GaN Crystals Grown on Sapphire
• Demonstration of AlGaN/GaN High Electron Mobility Transistors on a-Plane $(11\bar{2}0)$ Sapphire
• Influence of Growth Parameters and Thickness of AlN Spacer on Electrical Properties of AlGaN/AlN/GaN High-Electron-Mobility Transistors Grown on 4-Inch Si Substrate
• Effect of GaN Buffer Layer Growth Pressure on the Device Characteristics of AlGaN/GaN High-Electron-Mobility Transistors on Si
• High-Mobility AlGaN/GaN Heterostructures Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
• Origin and Appearance of Defective Pits in the Gate--Drain Region during Reliability Measurements of AlGaN/GaN High-Electron-Mobility Transistors on Si
• High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer
• Three Growth-Temperature-Dependent Regions for Nitrogen Incorporation in GaNAs Grown by Chemical Beam Epitaxy
• Defect Propagation from 3C-SiC Intermediate Layers to Ⅲ-Nitride Epilayers
• Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200mm Silicon (111) Substrate

もっと見る 閉じる

スポンサーリンク