Selvaraj Josephine | Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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概要
- Selvaraj Josephineの詳細を見る
- 同名の論文著者
- Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japanの論文著者
関連著者
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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Selvaraj Josephine
Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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TANAKA Mitsuhiro
R&D Division, NGK Insulators Ltd.
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Selvaraj Susai
Research Center For Nano-device And System Nagoya Institute Of Technology
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Selvaraj S.
Research Center For Nano-device And System Nagoya Institute Of Technology
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Selvaraj S.
Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Selvaraj Susai
Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Tanaka Mitsuhiro
R&D Division, NGK Insulators Ltd., Suda-cho, Mizuho-ku, Nagoya 467-8530, Japan
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Miyoshi Makoto
R&D Division, NGK Insulators Ltd., Suda-cho, Mizuho-ku, Nagoya 467-8530, Japan
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Kuraoka Yoshitaka
R&D Division, NGK Insulators Ltd., Suda-cho, Mizuho-ku, Nagoya 467-8530, Japan
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Kuraoka Yoshitaka
R&D Division, NGK Insulators Ltd., Suda-cho, Mizuho-ku, Nagoya 467-8530, Japan
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Miyoshi Makoto
R&D Division, NGK Insulators Ltd., Suda-cho, Mizuho-ku, Nagoya 467-8530, Japan
著作論文
- Device Characteristics of Metalorganic Chemical Vapor Deposition-Grown InAlN/GaN High-Electron-Mobility Transistors on AlN/Sapphire Template
- Effect of GaN Buffer Layer Growth Pressure on the Device Characteristics of AlGaN/GaN High-Electron-Mobility Transistors on Si