Selvaraj Susai | Research Center For Nano-device And System Nagoya Institute Of Technology

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概要

• 同名の論文著者
• Research Center For Nano-device And System Nagoya Institute Of Technologyの論文著者

関連著者

• Selvaraj Susai

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Egawa Takashi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

• Ing Ng

  School Of Eee Division Of Microelectronics Nanyang Technological University

• Selvaraj Susai

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

• EGAWA Takashi

  Research center for Nano-Device and System, Nagoya Institute of Technology

• TANAKA Mitsuhiro

  R&D Division, NGK Insulators Ltd.

• Arulkumaran Subramaniam

  Monolithic Microwave Integrated Circuit Design Center Temasek Laboratories Nanyang Technological Uni

• Ing Ng

  School Of Electrical And Electronic Engineering Nanyang Technological University

• HONG Liu

  School of Electrical and Electronic Engineering, Nanyang Technological University

• Arulkumaran Subramaniam

  Temasek Laboratories Nanyang Technological University

• VICKNESH Sahmuganathan

  Temasek Laboratories@NTU, Nanyang Technological University

• Tanaka Mitsuhiro

  R&D Division, NGK Insulators Ltd., Suda-cho, Mizuho-ku, Nagoya 467-8530, Japan

• Selvaraj Josephine

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

• Miyoshi Makoto

  R&D Division, NGK Insulators Ltd., Suda-cho, Mizuho-ku, Nagoya 467-8530, Japan

• Kuraoka Yoshitaka

  R&D Division, NGK Insulators Ltd., Suda-cho, Mizuho-ku, Nagoya 467-8530, Japan

• Kuraoka Yoshitaka

  R&D Division, NGK Insulators Ltd., Suda-cho, Mizuho-ku, Nagoya 467-8530, Japan

• Miyoshi Makoto

  R&D Division, NGK Insulators Ltd., Suda-cho, Mizuho-ku, Nagoya 467-8530, Japan

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著作論文

• Influence of Ammonia in the Deposition Process of SiN on the Performance of SiN/AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors on 4-in. Si(111)
• Device Characteristics of Metalorganic Chemical Vapor Deposition-Grown InAlN/GaN High-Electron-Mobility Transistors on AlN/Sapphire Template
• Improved Power Device Figure-of-Merit ($4.0\times 10^{8}$ V2 $\Omega^{-1}$ cm-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si
• Demonstration of AlGaN/GaN High Electron Mobility Transistors on a-Plane $(11\bar{2}0)$ Sapphire

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