Improved Power Device Figure-of-Merit ($4.0\times 10^{8}$ V2 $\Omega^{-1}$ cm-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si

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概要

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• The OFF-state breakdown voltage ($\mathit{BV}_{\text{gd}}$) characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) on a 4-in. Si substrate were investigated and analyzed. The HEMTs with $L_{\text{gd}} = 10$ μm exhibited $\mathit{BV}_{\text{gd}}$ of 723 V with the specific on-resistance $R_{\text{DS[ON]}}$ of 1.3 m$\Omega$ cm2. Due to the improved ohmic contact, the devices exhibited low $R_{\text{DS[ON]}}$ values. The power device figure-of-merit ($\mathrm{FOM}=\mathit{BV}_{\text{gd}}{}^{2}/R_{\text{DS[ON]}}$) is as high as $4.0\times 10^{8}$ V2 $\Omega^{-1}$ cm-2, the highest among the reported values for GaN HEMTs on a 4-in. Si. Due to the low vertical buffer leakage current, a high vertical breakdown voltage of ${\sim}1200$ V has been achieved with the total buffer thickness ($d_{\text{Buff}}$) of 2.2 μm.

• 2011-08-25

著者

• Selvaraj Susai

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Ing Ng

  School Of Eee Division Of Microelectronics Nanyang Technological University

• Arulkumaran Subramaniam

  Temasek Laboratories Nanyang Technological University

• VICKNESH Sahmuganathan

  Temasek Laboratories@NTU, Nanyang Technological University

• Egawa Takashi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

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