Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 2012-09-25
著者
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Arulkumaran Subramaniam
Temasek Laboratories Nanyang Technological University
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ING Ng
NOVITAS-Centre of Excellence for Nanoelectronics, School of Electrical and Electronic Engineering, Nanyang Technological University
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AGRAWAL Manvi
NOVITAS-Centre of Excellence for Nanoelectronics, School of Electrical and Electronic Engineering, Nanyang Technological University
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LEE Kenneth.
Temasek Laboratories, Nanyang Technological University
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DHARMARASU Nethaji
Temasek Laboratories, Nanyang Technological University
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RADHAKRISHNAN K.
NOVITAS-Centre of Excellence for Nanoelectronics, School of Electrical and Electronic Engineering, Nanyang Technological University
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RAVIKIRAN Lingaparthi
NOVITAS-Centre of Excellence for Nanoelectronics, School of Electrical and Electronic Engineering, Nanyang Technological University
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ARULKUMARAN Subramaniam
Temasek Laboratories, Nanyang Technological University
関連論文
- Improved Power Device Figure-of-Merit ($4.0\times 10^{8}$ V2 $\Omega^{-1}$ cm-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si
- Improved Device Performance by Post-Oxide Annealing in Atomic-Layer-Deposited Al_2O_3/AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor on Si
- Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate
- Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy
- Demonstration of Submicron-Gate AlGaN/GaN High-Electron-Mobility Transistors on Silicon with Complementary Metal--Oxide--Semiconductor-Compatible Non-Gold Metal Stack
- Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy
- Effect of Stress Mitigating Layers on the Structural Properties of GaN Grown by Ammonia Molecular Beam Epitaxy on 100 mm Si(111)
- Low-Contact-Resistance Non-Gold Ta/Si/Ti/Al/Ni/Ta Ohmic Contacts on Undoped AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon
- Demonstration of Submicron-Gate AlGaN/GaN High-Electron-Mobility Transistors on Silicon with Complementary Metal-Oxide-Semiconductor-Compatible Non-Gold Metal Stack