Effect of Stress Mitigating Layers on the Structural Properties of GaN Grown by Ammonia Molecular Beam Epitaxy on 100 mm Si(111)

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概要

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• The effect of AlGaN and AlN/GaN stress mitigating layers (SMLs) on the structural and morphological properties of GaN grown by ammonia molecular beam epitaxy (MBE) on 100 mm Si(111) has been studied. GaN grown on both AlGaN and AlN/GaN SMLs showed two-dimensional (2D) growth mode whereas the growth mode was three-dimensional (3D) for the GaN grown without the use of any SML. GaN on AlN/GaN SML showed lesser pit density on the surface, higher residual compressive strain and lower dislocation density compared to the GaN grown on AlGaN SML. Further enhancement in surface morphology with pit-free surface and reduced surface roughness was obtained by increasing the GaN growth rate from 0.22 to 0.70 μm/h in AlN/GaN SML structure.

• 2013-08-25

著者

• AGRAWAL Manvi

  NOVITAS-Centre of Excellence for Nanoelectronics, School of Electrical and Electronic Engineering, Nanyang Technological University

• DHARMARASU Nethaji

  Temasek Laboratories, Nanyang Technological University

• RADHAKRISHNAN K.

  NOVITAS-Centre of Excellence for Nanoelectronics, School of Electrical and Electronic Engineering, Nanyang Technological University

• RAVIKIRAN Lingaparthi

  NOVITAS-Centre of Excellence for Nanoelectronics, School of Electrical and Electronic Engineering, Nanyang Technological University

• Ravikiran Lingaparthi

  NOVITAS-Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798

• Radhakrishnan K.

  NOVITAS-Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798

関連論文

• Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy
• Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy
• Effect of Stress Mitigating Layers on the Structural Properties of GaN Grown by Ammonia Molecular Beam Epitaxy on 100 mm Si(111)

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